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科研机构
半导体研究所 [9]
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会议论文 [9]
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2004 [1]
2003 [2]
2002 [1]
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光电子学 [3]
半导体材料 [3]
半导体物理 [3]
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内容类型:会议论文
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Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure
会议论文
asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003
Xu Y
;
Zhu XP
;
Ye XJ
;
Kang XN
;
Cao Q
;
Guo L
;
Chen LH
收藏
  |  
浏览/下载:17/1
  |  
提交时间:2010/10/29
finite-difference methods
AlGaInP laser diodes
RISA
OPERATION
LAYER
NM
Lasing of CdSSe quantum dots in glass spherical microcavity
会议论文
international conference on superlattices nano-structures and nano-devices (icsnn-02), toulouse, france, jul 22-26, 2002
作者:
Jiang DS
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/11/15
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/11/15
neutron irradiation
annealing
defects in silicon
SPECTRA
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
indium phosphide
semi-insulating
annealing
PICTS
photoluminescence
SEMIINSULATING INP
INDIUM-PHOSPHIDE
FE
PHOTOLUMINESCENCE
TEMPERATURE
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Gao F
;
Lin YX
;
Huang DD
;
Li JP
;
Sun DZ
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/11/15
annealing
molecular beam epitaxy
germanium silicon alloys
semiconducting materials
STRAIN RELAXATION
1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors
会议论文
asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001
Zhang W
;
Pan Z
;
Li LH
;
Zhang RK
;
Lin YW
;
Wu RG
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/10/29
GaInNAs
photodetector
resonant cavity enhanced
high speed property
MOLECULAR-BEAM EPITAXY
SCHOTTKY PHOTODIODES
PERFORMANCE
EFFICIENCY
OPERATION
BANDWIDTH
DESIGN
SI
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy
会议论文
10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001
Niu ZC
;
Wang XD
;
Miao ZH
;
Lan Q
;
Kong YC
;
Zhou DY
;
Feng SL
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/10/29
molecular beam epitaxy
InGaAs islands
photolumineseence
line-width
1.3 MU-M
INAS/GAAS QUANTUM DOTS
OPTICAL-PROPERTIES
CAP LAYER
GAAS
LUMINESCENCE
STRAIN
Tunable MQW-DBR lasers using selective area growth
会议论文
4th international conference on thin film physics and applications, shanghai, peoples r china, may 08-11, 2000
Liu GL
;
Wang W
;
Zhang JY
;
Chen WX
;
Xu GY
;
Zhang BJ
;
Zhou F
;
Wang XJ
;
Zhu HL
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2010/10/29
selective area growth
multi-quantum-well
distributed Bragg reflector laser
MOCVD
tunable laser
EPITAXY
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
会议论文
2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/11/15
strip detectors
silicon detectors
annealing
simulation
irradiation
N-EFF
JUNCTION DETECTORS
RADIATION-DAMAGE
MODELS
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