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Edge effect in silicon solar cells with dopant-free interdigitated back-contacts 期刊论文
NANO ENERGY, 2020, 卷号: 74
作者:  Lin, Hao;  Wang, Jiajia;  Wang, Zilei;  Xu, Zhiyuan;  Gao, Pingqi
收藏  |  浏览/下载:13/0  |  提交时间:2020/12/16
Comparison of different types of interfacial oxides on hole-selective p(+)-poly-Si passivated contacts for high-efficiency c-Si solar cells 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 卷号: 210
作者:  Guo, Xueqi;  Liao, Mingdun;  Rui, Zhe;  Yang, Qing;  Wang, Zhixue
收藏  |  浏览/下载:25/0  |  提交时间:2020/12/16
Passivating Surface Defects of n-SnO2 Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2020, 卷号: 6, 期号: 3
作者:  Peng, Ruixiang;  Yan, Tingting;  Chen, Junwei;  Yang, Shangfeng;  Ge, Ziyi
收藏  |  浏览/下载:13/0  |  提交时间:2020/12/16
Effective gettering of in-situ phosphorus-doped polysilicon passivating contact prepared using plasma-enhanced chemical-vapor deposition technique 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 卷号: 206
作者:  Wang, Zhixue;  Liu, Zunke;  Liao, Mingdun;  Huang, Dandan;  Guo, Xueqi
收藏  |  浏览/下载:21/0  |  提交时间:2020/12/16
Effective Surface Treatment for High-Performance Inverted CsPbI2Br Perovskite Solar Cells with Efficiency of 15.92% 期刊论文
NANO-MICRO LETTERS, 2020, 卷号: 12, 期号: 1
作者:  Fu, Sheng;  Li, Xiaodong;  Wan, Li;  Zhang, Wenxiao;  Song, Weijie
收藏  |  浏览/下载:10/0  |  提交时间:2020/12/16
Computational analysis of a high-efficiency tunnel oxide passivated contact (TOPCon) solar cell with a low-work-function electron-selective-collection layer 期刊论文
SOLAR ENERGY, 2018, 卷号: 170, 页码: 780-787
作者:  Wang, Dan;  Quan, Cheng;  Zeng, Yuheng;  Liao, Mingdun;  Tong, Hui
收藏  |  浏览/下载:120/0  |  提交时间:2018/12/04
Si  
The role of MoS2 as an interfacial layer in graphene/silicon solar cells 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 卷号: 17, 期号: 12, 页码: 8182-8186
作者:  Jiao, Kejia;  Duan, Chunyang;  Wu, Xiaofeng;  Chen, Jiayuan;  Wang, Yu
收藏  |  浏览/下载:19/0  |  提交时间:2015/05/12
Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 53, 期号: 4, 页码: 41301
作者:  赵梅;Zhao, M;  Liu, L;  Liang, RR;  Wang, J;  Xu, J
收藏  |  浏览/下载:14/0  |  提交时间:2016/04/08


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