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Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 2, 页码: 23528
作者:  Xu, FJ;  Shen, B;  Lu, L;  Miao, ZL;  Song, J
收藏  |  浏览/下载:22/0  |  提交时间:2016/06/29
Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 15, 页码: 151907
作者:  Yang, XL;  Zhu, WX;  Wang, CD;  Fang, H;  Yu, TJ
收藏  |  浏览/下载:25/0  |  提交时间:2016/06/29


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