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3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor 期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 4, 页码: -
作者:  Zhang Jin-Xin;  Guo Hong-Xia;  Guo Qi;  Wen Lin;  Cui Jiang-Wei
收藏  |  浏览/下载:30/0  |  提交时间:2013/11/07
Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 7, 页码: -
作者:  Xi Shan-Bin;  Lu Wu;  Wang Zhi-Kuan;  Ren Di-Yuan;  Zhou Dong
收藏  |  浏览/下载:16/0  |  提交时间:2012/11/29


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