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Strain compensated AlInGaAs/InGaAs/InAs triangular quantum wells for lasing wavelength beyond 2 mu m 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 11, 页码: 3237-3240
Gu, Y; Zhang, YG(张永刚); Liu, S
收藏  |  浏览/下载:15/0  |  提交时间:2012/03/24
Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor 期刊论文
ACTA PHYSICA SINICA, 1999, 卷号: 48, 期号: 3, 页码: 556-560
Zhang, XH; Hu, YS; Wu, J; Cheng, ZQ; Xia, GQ; Xu, YS; Chen, ZH; Gui, YS; Chu, JH
收藏  |  浏览/下载:9/0  |  提交时间:2012/03/25


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