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A novel porous substrate for the growth of high quality GaN crystals by HVPE 期刊论文
RSC ADVANCES, 2014, 卷号: 4, 期号: 66, 页码: 35106-35111
作者:  Dai, YB;  Wu, YZ;  Zhang, L;  Shao, YL;  Tian, Y
收藏  |  浏览/下载:21/0  |  提交时间:2016/04/08
Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems 期刊论文
Research on Chemical Intermediates, 2011, 卷号: 37, 期号: 2-5, 页码: 467-477
作者:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Li W(李炜);  Prasad V
收藏  |  浏览/下载:23/0  |  提交时间:2012/04/01


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