CORC

浏览/检索结果: 共12条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB
收藏  |  浏览/下载:26/0  |  提交时间:2010/03/08
Localized exciton dynamics in AlInGaN alloy 期刊论文
solid state communications, 2003, 卷号: 126, 期号: 8, 页码: 473-477
Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK
收藏  |  浏览/下载:43/0  |  提交时间:2010/08/12
Optical properties of AIInGaN quaternary alloys 会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK
收藏  |  浏览/下载:15/0  |  提交时间:2010/10/29
Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film 期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 7, 页码: 1564-1570
Wang YQ; Chen WD; Chen CY; Diao HW; Zhang SB; Xu YY; Kong GL; Liao XB
收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
Structural characterization of stable amorphous silicon films 期刊论文
solid state communications, 2002, 卷号: 122, 期号: 5, 页码: 283-286
Zhang SB; Kong GL; Wang YQ; Sheng SR; Liao XB
收藏  |  浏览/下载:55/0  |  提交时间:2010/08/12
The microstructure and its high-temperature annealing behaviours of a-Si : O : H film 期刊论文
acta physica sinica, 2001, 卷号: 50, 期号: 12, 页码: 2418-2422
Wang YQ; Chen CY; Chen WD; Yang FH; Diao HW
收藏  |  浏览/下载:83/6  |  提交时间:2010/08/12
1.5 mu m luminescence characteristic of erbium in B, P doped a-SiO : H films 期刊论文
chinese physics, 2000, 卷号: 9, 期号: 10, 页码: 783-786
Liang JJ; Chen WD; Wang YQ; Chang Y; Wang ZG
收藏  |  浏览/下载:42/0  |  提交时间:2010/08/12
Photoluminescence of erbium-doped hydrogenated amorphous SiOx(0 < x < 2) 期刊论文
acta physica sinica, 2000, 卷号: 49, 期号: 7, 页码: 1386-1389
Liang JJ; Wang YQ; Chen WD; Wang ZG; Chang Y
收藏  |  浏览/下载:53/0  |  提交时间:2010/08/12
Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2) 期刊论文
chinese physics letters, 2000, 卷号: 17, 期号: 11, 页码: 838-840
Liang JJ; Chen WD; Wang YQ; He J; Zheng WM; Wang ZG
收藏  |  浏览/下载:41/0  |  提交时间:2010/08/12
Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001) 期刊论文
revista mexicana de fisica, 1998, 卷号: 44, 期号: 0, 页码: 85-88
Zou LF; Acosta-Ortiz SE; Zou LX; Regalado LE; Sun DZ; Wang ZG
收藏  |  浏览/下载:34/0  |  提交时间:2010/08/12


©版权所有 ©2017 CSpace - Powered by CSpace