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Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells 期刊论文
solid state communications, 2002, 卷号: 122, 期号: 5, 页码: 287-292
Wan SP; Xia JB
收藏  |  浏览/下载:47/0  |  提交时间:2010/08/12
Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique 期刊论文
journal of physics-condensed matter, 2001, 卷号: 13, 期号: 18, 页码: 3923-3930
Liu B; Li Q; Xu ZY; Ge WK
收藏  |  浏览/下载:115/10  |  提交时间:2010/08/12
Determination of the values of hole-mixing coefficients due to interface and electric field in GaAs/AlxGa1-xAs superlattices 期刊论文
physical review b, 2001, 卷号: 63, 期号: 11, 页码: art.no.115317
作者:  Ye XL
收藏  |  浏览/下载:106/2  |  提交时间:2010/08/12
Effect of arsenic precipitates on Fermi level in GaAs grown by molecular-beam epitaxy at low temperature 期刊论文
journal of applied physics, 2000, 卷号: 87, 期号: 6, 页码: 2923-2925
Chen YH; Wang ZG; Yang Z
收藏  |  浏览/下载:63/0  |  提交时间:2010/08/12
Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy 期刊论文
applied physics letters, 1998, 卷号: 73, 期号: 3, 页码: 336-338
Sheng SR; Liao XB; Kong GL; Han HX
收藏  |  浏览/下载:52/0  |  提交时间:2010/08/12
CHANNELING ALIGNMENT FOR EPITAXIAL LIGHT-MASS FILM ON HEAVY-MASS SUBSTRATE 期刊论文
chinese physics letters, 1994, 卷号: 11, 期号: 5, 页码: 293-296
YIN SD; XIAO GM; ZHU PR
收藏  |  浏览/下载:21/0  |  提交时间:2010/11/15


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