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Charge transfer and optical phonon mixing in few-layer graphene chemically doped with sulfuric acid 期刊论文
physical review b, 2010, 卷号: 82, 期号: 24, 页码: article no.245423
作者:  Tan PH
收藏  |  浏览/下载：80/9  |  提交时间：2011/07/05
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:  Chen L
收藏  |  浏览/下载：79/0  |  提交时间：2010/03/08
Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 8, 页码: art. no. 087802
Ruan J; Yu TJ; Jia CY; Tao RC; Wang ZG; Zhang GY
收藏  |  浏览/下载：89/2  |  提交时间：2010/03/08
Monolithic integration of sampled grating DBR with electroabsorption modulator by combining selective-area-growth MOCVD and quantum-well intermixing 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 10, 页码: 3670-3672
Liu, HB; Zhao, LJ; Pan, JQ; Zhu, HL; Zhou, F; Wang, BJ; Wang, W
收藏  |  浏览/下载：19/0  |  提交时间：2010/03/08
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 40529
作者:  Wu DH;  Niu ZC;  Jiang DS;  Xu YQ
收藏  |  浏览/下载：82/0  |  提交时间：2010/04/11
Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 5, 页码: 1114-1119
作者:  Liang S;  Pan JQ
收藏  |  浏览/下载：56/0  |  提交时间：2010/04/11
Recombination property of nitrogen-acceptor-bound states in ZnO 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 4, 页码: art.no.046101
Yang XD; Xu ZY; Sun Z; Sun BQ; Ding L; Wang FZ; Ye ZZ
收藏  |  浏览/下载：53/0  |  提交时间：2010/04/11
Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation 期刊论文
applied surface science, 2005, 卷号: 249, 期号: 1-4, 页码: 340-345
Sun, MH; Zhao, TX; Jia, CY; Xu, PS; Lu, ED; Hsu, CC; Ji, H
收藏  |  浏览/下载：36/7  |  提交时间：2010/03/17
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:  Zhang YH;  Jiang DS
收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15
Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 11, 页码: 2061-2063
Fang ZD; Gong Z; Miao ZH; Xu XH; Ni HQ; Niu ZC
收藏  |  浏览/下载：64/0  |  提交时间：2010/08/12

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