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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells 期刊论文 applied physics letters, 2011, 卷号: 99, 期号: 11, 页码: 113514 Shang XJ; He JF; Li MF; Zhan F; Ni HQ; Niu ZC; Pettersson H; Fu Y 收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06 WELL INFRARED PHOTODETECTOR  PHOTOCURRENT  EFFICIENCY   Lattice polarity detection of InN by circular photogalvanic effect 期刊论文 applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902 Zhang Q; Wang XQ; He XW; Yin CM; Xu FJ; Shen B; Chen YH; Wang ZG; Ishitani Y; Yoshikawa A 收藏  |  浏览/下载：68/0  |  提交时间：2010/03/08 III-V semiconductors  indium compounds  nondestructive testing  photoconductivity  radiation effects  semiconductor thin films  wide band gap semiconductors   Observation of the surface circular photogalvanic effect in InN films 期刊论文 solid state communications, 2009, 卷号: 149, 期号: 25-26, 页码: 1004-1007 Zhang Z; Zhang R; Xie ZL; Liu B; Li M; Fu DY; Fang HN; Xiu XQ; Lu H; Zheng YD; Chen YH; Tang CG; Wang ZG 收藏  |  浏览/下载：158/1  |  提交时间：2010/03/08 InN  Surface charge accumulation layer  Spin-dependent current  Spin splitting   Circular photogalvanic effect at inter-band excitation in InN 期刊论文 solid state communications, 2008, 卷号: 145, 期号: 4, 页码: 159-162 Zhang, Z; Zhang, R; Liu, B; Xie, ZL; Xiu, XQ; Han, R; Lu, H; Zheng, YD; Chen, YH; Tang, CG; Wang, ZG 收藏  |  浏览/下载：68/2  |  提交时间：2010/03/08 InN  photogalvanic  inter-band transition   Anomalous photogalvanic effect of circularly polarized light incident on the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures at room temperature 期刊论文 physical review letters, 2008, 卷号: 101, 期号: 14, 页码: art. no. 147402 He, XW; Shen, B; Chen, YH; Zhang, Q; Han, K; Yin, CM; Tang, N; Xu, FJ; Tang, CG; Yang, ZJ; Qin, ZX; Zhang, GY; Wang, ZG 收藏  |  浏览/下载：42/0  |  提交时间：2010/03/08 QUANTUM-WELLS  SPIN  SEMICONDUCTORS