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The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Li JB
收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93507
作者:  Wang LG;  Chen L;  Zhu H
收藏  |  浏览/下载：43/5  |  提交时间：2011/07/05
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：54/0  |  提交时间：2010/12/27
First principle study of Mg, Si and Mn co-doped GaN 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 1, 页码: 450-458
作者:  Zhao DG
收藏  |  浏览/下载：232/44  |  提交时间：2010/03/08
Possible origin of ferromagnetism in undoped anatase TiO2 期刊论文
physical review b, 2009, 卷号: 79, 期号: 9, 页码: art. no. 092411
作者:  Li JB
收藏  |  浏览/下载：72/34  |  提交时间：2010/03/08
GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 2, 页码: art. no. 028102
作者:  Tang B;  Wang GW;  Xu YQ
收藏  |  浏览/下载：160/45  |  提交时间：2010/03/08
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901
作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H
收藏  |  浏览/下载：64/1  |  提交时间：2010/03/08
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ; Zhu LF; Zhao YH; Liu BG
收藏  |  浏览/下载：218/56  |  提交时间：2010/03/08
First-principles study of transition metal impurities in Si 期刊论文
physical review b, 2008, 卷号: 77, 期号: 15, 页码: art. no. 155201
Zhang ZZ; Partoens B; Chang K; Peeters FM
收藏  |  浏览/下载：61/7  |  提交时间：2010/03/08
Intrinsic spin hall effect induced by quantum phase transition in HgCdTe quantum wells 期刊论文
physical review letters, 2008, 卷号: 100, 期号: 5, 页码: art. no. 056602
Yang W; Chang K; Zhang SC
收藏  |  浏览/下载：44/1  |  提交时间：2010/03/08

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