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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Robust Manipulation of Magnetism in Dilute MagneticSemiconductor (Ga,Mn)As by Organic Molecules 期刊论文 advanced materials, 2015, 卷号: 27, 页码: 8043–8050 Xiaolei Wang; Hailong Wang; Dong Pan; Timothy Keiper; Lixia Li; Xuezhe Yu; Jun Lu; Eric Lochner; Stephan von Molná r; Peng Xiong; Jianhua Zhao 收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29 Magnetic and electronic structure properties of Co-doped SnO2 nanoparticles synthesized by the sol-gel-hydrothermal technique 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.83930 作者:  Li JB 收藏  |  浏览/下载：63/1  |  提交时间：2011/07/05 ROOM-TEMPERATURE FERROMAGNETISM  SEMICONDUCTORS  ENERGY   Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs 期刊论文 science china-physics mechanics & astronomy, 2010, 卷号: 53, 期号: 5, 页码: 779-782 Luo J (Luo Jing); Zheng HZ (Zheng HouZhi); Shen C (Shen Chao); Zhang H (Zhang Hao); Zhu K (Zhu Ke); Zhu; H (Zhu Hui); Liu J (Liu Jian); Li GR (Li GuiRong); Ji Y (Ji Yang); Zhao JH (Zhao JianHua) 收藏  |  浏览/下载：52/0  |  提交时间：2010/05/24 dilute magnetic semiconductor  magneto-crystalline anisotropy  time-resolved Kerr rotation  coherent precession   Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206 Shi LJ; Zhu LF; Zhao YH; Liu BG 收藏  |  浏览/下载：218/56  |  提交时间：2010/03/08 ab initio calculations  aluminium compounds  annealing  band structure  chromium  Curie temperature  density functional theory  exchange interactions (electron)  ferromagnetic materials  III-V semiconductors  semimagnetic semiconductors  total energy  vacancies (crystal)   The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires 期刊论文 journal of applied physics, 2008, 卷号: 104, 期号: 8, 页码: art. no. 084307 Xu, Q; Li, JB; Li, SS; Xia, JB 收藏  |  浏览/下载：75/1  |  提交时间：2010/03/08 EXCHANGE INTERACTION  SEMICONDUCTORS  GAAS  ENERGIES  DOTS  MN   Giant and zero electron g factors of dilute nitride semiconductor nanowires 期刊论文 applied physics letters, 2007, 卷号: 90, 期号: 19, 页码: art.no.193111 Zhang XW; Fan WJ; Li SS; Xia JB 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/29