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Donor-donor binding in In2O3: Engineering shallow donor levels 期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 8, 页码: art. no. 083704
Tang LM (Tang Li-Ming); Wang LL (Wang Ling-Ling); Wang D (Wang Dan); Liu JZ (Liu Jian-Zhe); Chen KQ (Chen Ke-Qiu)
收藏  |  浏览/下载:71/0  |  提交时间:2010/05/24
Lattice polarity detection of InN by circular photogalvanic effect 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902
Zhang Q; Wang XQ; He XW; Yin CM; Xu FJ; Shen B; Chen YH; Wang ZG; Ishitani Y; Yoshikawa A
收藏  |  浏览/下载:68/0  |  提交时间:2010/03/08
One-dimensional quantum waveguide theory of Rashba electrons 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 9, 页码: art.no.093705
Liu DY (Liu Duan-Yang); Xia JB (Xia Jian-Bai); Chang YC (Chang Yia-Chung)
收藏  |  浏览/下载:170/30  |  提交时间:2010/03/08
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:  Chen L
收藏  |  浏览/下载:79/0  |  提交时间:2010/03/08
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ; Zhu LF; Zhao YH; Liu BG
收藏  |  浏览/下载:218/56  |  提交时间:2010/03/08
Effect on nitrogen acceptor as Mg is alloyed into ZnO 期刊论文
applied physics letters, 2008, 卷号: 92, 期号: 6, 页码: art. no. 062110
Gai, YQ; Yao, B; Wei, ZP; Li, YF; Lu, YM; Shen, DZ; Zhang, JY; Zhao, DX; Fan, XW; Li, JB; Xia, JB
收藏  |  浏览/下载:61/0  |  提交时间:2010/03/08
Recombination property of nitrogen-acceptor-bound states in ZnO 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 4, 页码: art.no.046101
Yang XD; Xu ZY; Sun Z; Sun BQ; Ding L; Wang FZ; Ye ZZ
收藏  |  浏览/下载:53/0  |  提交时间:2010/04/11
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well 会议论文
asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003
Ying-Qiang X; Zhang W; Niu ZC; Wu RG; Wang QM
收藏  |  浏览/下载:18/1  |  提交时间:2010/10/29
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy 期刊论文
applied physics letters, 2002, 卷号: 81, 期号: 21, 页码: 3960-3962
Ng YF; Cao YG; Xie MH; Wang XL; Tong SY
收藏  |  浏览/下载:41/0  |  提交时间:2010/08/12
Photoluminescence of rapid-thermal annealed Mg-doped GaN films 期刊论文
solid-state electronics, 2001, 卷号: 45, 期号: 7, 页码: 1153-1157
Wang LS; Fong WK; Surya C; Cheah KW; Zheng WH; Wang ZG
收藏  |  浏览/下载:76/5  |  提交时间:2010/08/12


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