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科研机构
半导体研究所 [16]
内容类型
期刊论文 [14]
会议论文 [2]
发表日期
2010 [1]
2009 [3]
2008 [2]
2006 [1]
2004 [1]
2002 [1]
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半导体物理 [16]
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Donor-donor binding in In2O3: Engineering shallow donor levels
期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 8, 页码: art. no. 083704
Tang LM (Tang Li-Ming)
;
Wang LL (Wang Ling-Ling)
;
Wang D (Wang Dan)
;
Liu JZ (Liu Jian-Zhe)
;
Chen KQ (Chen Ke-Qiu)
收藏
  |  
浏览/下载:71/0
  |  
提交时间:2010/05/24
AUGMENTED-WAVE METHOD
ELECTRONIC-STRUCTURE
SEMICONDUCTORS
FILMS
ZNSE
ZNTE
Lattice polarity detection of InN by circular photogalvanic effect
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902
Zhang Q
;
Wang XQ
;
He XW
;
Yin CM
;
Xu FJ
;
Shen B
;
Chen YH
;
Wang ZG
;
Ishitani Y
;
Yoshikawa A
收藏
  |  
浏览/下载:68/0
  |  
提交时间:2010/03/08
III-V semiconductors
indium compounds
nondestructive testing
photoconductivity
radiation effects
semiconductor thin films
wide band gap semiconductors
One-dimensional quantum waveguide theory of Rashba electrons
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 9, 页码: art.no.093705
Liu DY (Liu Duan-Yang)
;
Xia JB (Xia Jian-Bai)
;
Chang YC (Chang Yia-Chung)
收藏
  |  
浏览/下载:170/30
  |  
提交时间:2010/03/08
MESOSCOPIC STRUCTURES
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:
Chen L
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  |  
浏览/下载:79/0
  |  
提交时间:2010/03/08
annealing
gallium arsenide
iron
magnetic anisotropy
magnetic epitaxial layers
magnetisation
molecular beam epitaxial growth
transmission electron microscopy
X-ray diffraction
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
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  |  
浏览/下载:218/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Effect on nitrogen acceptor as Mg is alloyed into ZnO
期刊论文
applied physics letters, 2008, 卷号: 92, 期号: 6, 页码: art. no. 062110
Gai, YQ
;
Yao, B
;
Wei, ZP
;
Li, YF
;
Lu, YM
;
Shen, DZ
;
Zhang, JY
;
Zhao, DX
;
Fan, XW
;
Li, JB
;
Xia, JB
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  |  
浏览/下载:61/0
  |  
提交时间:2010/03/08
P-TYPE ZNO
II-VI
BAND-GAP
SEMICONDUCTORS
FILMS
MGXZN1-XO
EPITAXY
Recombination property of nitrogen-acceptor-bound states in ZnO
期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 4, 页码: art.no.046101
Yang XD
;
Xu ZY
;
Sun Z
;
Sun BQ
;
Ding L
;
Wang FZ
;
Ye ZZ
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2010/04/11
MOLECULAR-BEAM EPITAXY
P-TYPE ZNO
OPTICAL-PROPERTIES
EXCITON FORMATION
PHOTOLUMINESCENCE
FILMS
SPECTROSCOPY
DYNAMICS
IMPURITY
ENERGY
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
收藏
  |  
浏览/下载:18/1
  |  
提交时间:2010/10/29
GaNAs
SiO2 encapsulation
rapid-thermal-annealing
nitrogen reorganization
MOLECULAR-BEAM EPITAXY
OPTICAL-PROPERTIES
MU-M
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy
期刊论文
applied physics letters, 2002, 卷号: 81, 期号: 21, 页码: 3960-3962
Ng YF
;
Cao YG
;
Xie MH
;
Wang XL
;
Tong SY
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/08/12
MISFIT DISLOCATIONS
DEFECTS
INGAN
GAN
REDUCTION
INDIUM
LAYERS
FILMS
Photoluminescence of rapid-thermal annealed Mg-doped GaN films
期刊论文
solid-state electronics, 2001, 卷号: 45, 期号: 7, 页码: 1153-1157
Wang LS
;
Fong WK
;
Surya C
;
Cheah KW
;
Zheng WH
;
Wang ZG
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  |  
浏览/下载:76/5
  |  
提交时间:2010/08/12
p-type GaN
metalorganic chemical vapor deposition
photoluminescence
X-ray diffraction
rapid-thermal annealing
P-TYPE GAN
RECOMBINATION
EMISSION
ENERGY
BANDS
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