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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Optical properties of aluminum-, gallium-, and indium-doped Bi4Ti3O12 thin films 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 11, 页码: art. no. 113108 作者:  Jia CH 收藏  |  浏览/下载：107/4  |  提交时间：2010/03/08 PULSED-LASER DEPOSITION  FERROELECTRIC PROPERTIES  ELECTRICAL-PROPERTIES  STRUCTURAL-PROPERTIES  SUBSTRATE   Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 2, 页码: art. no. 023104 作者:  Zhu JJ;  Zhang SM;  Jiang DS;  Zhao DG;  Yang H 收藏  |  浏览/下载：193/56  |  提交时间：2010/03/08 aluminium compounds  claddings  gallium compounds  III-V semiconductors  indium compounds  quantum well lasers  refractive index  waveguide lasers   Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101 作者:  Wei HY;  Jiao CM;  Song HP 收藏  |  浏览/下载：238/41  |  提交时间：2010/03/08 aluminium compounds  conduction bands  energy gap  high electron mobility transistors  III-V semiconductors  magnesium compounds  passivation  semiconductor heterojunctions  valence bands  wide band gap semiconductors  X-ray photoelectron spectra   Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者:  Qian X 收藏  |  浏览/下载：84/7  |  提交时间：2010/03/08 aluminium compounds  carrier lifetime  gallium arsenide  high-frequency effects  III-V semiconductors  optical Kerr effect  semiconductor heterojunctions  spin dynamics  two-dimensional electron gas   Organic light-emitting diodes with magnesium doped CuPc as an efficient electron injection layer 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 2, 页码: 719-721 Cao JS; Guan M; Cao GH; Zeng YP; Li JM; Qin DS 收藏  |  浏览/下载：92/4  |  提交时间：2010/03/08 DEVICES   Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206 Shi LJ; Zhu LF; Zhao YH; Liu BG 收藏  |  浏览/下载：218/56  |  提交时间：2010/03/08 ab initio calculations  aluminium compounds  annealing  band structure  chromium  Curie temperature  density functional theory  exchange interactions (electron)  ferromagnetic materials  III-V semiconductors  semimagnetic semiconductors  total energy  vacancies (crystal)   Structure and magnetic characteristics of nonpolar a-plane GaN : Mn films 期刊论文 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 16, 页码: art. no. 165004 Sun, LL; Yan, FW; Gao, HY; Zhang, HX; Zeng, YP; Wang, GH; Li, JM 收藏  |  浏览/下载：49/0  |  提交时间：2010/03/08 P-TYPE GAN  SAPPHIRE  PROPERTY   Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111 Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：63/0  |  提交时间：2010/03/08 aluminium compounds  dislocation density  electron mobility  gallium compounds  III-V semiconductors  interface roughness  semiconductor heterojunctions  two-dimensional electron gas  wide band gap semiconductors   A density-functional study of Al-doped Ti clusters: TinAl (n=1-13) 期刊论文 journal of chemical physics, 2004, 卷号: 120, 期号: 9, 页码: 4251-4257 Xiang J; Wei SH; Yan XH; You JQ; Mao YL 收藏  |  浏览/下载：360/126  |  提交时间：2010/03/09 ELECTRONIC SHELL STRUCTURE