CORC

在结果中检索

CORC

浏览/检索结果: 共25条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
First principles study of the electronic properties of twinned SiC nanowires 期刊论文
journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191
作者:  Li JB
收藏  |  浏览/下载：102/6  |  提交时间：2011/07/05
First principle study of the thermal conductance in graphene nanoribbon with vacancy and substitutional silicon defects 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 11, 页码: article no.113114
Jiang JW; Wang BS; Wang JS
收藏  |  浏览/下载：53/4  |  提交时间：2011/07/05
Au@Si-n: Growth behavior, stability and electronic structure 期刊论文
physics letters a, 2010, 卷号: 374, 期号: 27, 页码: 2736-2742
Wang J (Wang Jing); Liu Y (Liu Ying); Li YC (Li You-Cheng)
收藏  |  浏览/下载：22/0  |  提交时间：2010/07/18
Effect of counterpart on the tribological behavior and tribo-induced phase transformation of Si 期刊论文
tribology international, 2009, 卷号: 42, 期号: 5, 页码: 628-633
Li XC; Lu JJ; Yang SR
收藏  |  浏览/下载：59/24  |  提交时间：2010/03/08
First-principles study of transition metal impurities in Si 期刊论文
physical review b, 2008, 卷号: 77, 期号: 15, 页码: art. no. 155201
Zhang ZZ; Partoens B; Chang K; Peeters FM
收藏  |  浏览/下载：61/7  |  提交时间：2010/03/08
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD 期刊论文
superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159
Luo, WJ; Wang, XL; Guo, LC; Xiao, HL; Wang, CM; Ran, JX; Li, JP; Li, JM
收藏  |  浏览/下载：85/1  |  提交时间：2010/03/08
Correlation between Er3+ emission and Si clusters in Erbium-doped a-SiOx : H films 期刊论文
physica e-low-dimensional systems & nanostructures, 2005, 卷号: 27, 期号: 1-2, 页码: 21-25
Chen CY; Chen WD; Song SF; Xu ZJ; Liao XB; Li GH; Bian LF; Ding K
收藏  |  浏览/下载：24/0  |  提交时间：2010/03/17
Preferred growth of nanocrystalline silicon in boron-doped nc-Si : H Films 期刊论文
vacuum, 2004, 卷号: 74, 期号: 1, 页码: 69-75
Wei WS; Wang TM; Zhang CX; Li GH; Han HX; Ding K
收藏  |  浏览/下载：184/44  |  提交时间：2010/03/09
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 期刊论文
microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 333-339
Wang QY; Wang JH; Deng HF; Lin LY
收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12
Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 期刊论文
microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 504-509
Zhang ZC; Ren BY; Chen YH; Yang SY; Wang ZG
收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12

©版权所有 ©2017 CSpace - Powered by CSpace