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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文 chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123 Gao, HL; Zeng, YP; Wang, BQ; Zhu, ZP; Wang, ZG 收藏  |  浏览/下载：54/6  |  提交时间：2010/03/08 molecular beam epitaxy  semiconducting III-V materials  high electron mobility transistors   Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 6, 页码: 2269-2272 Zhao, YM; Sun, GS; Ning, J; Liu, XF; Zhao, WS; Wang, L; Li, JM 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION   A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors 期刊论文 chinese physics letters, 2007, 卷号: 24, 期号: 2, 页码: 516-518 Hu, WG (Hu Wei-Guo); Liu, XL (Liu Xiang-Lin); Zhang, PF (Zhang Pan-Feng); Zhao, FA (Zhao Feng-Ai); Jiao, CM (Jiao Chun-Mei); Wei, HY (Wei Hong-Yuan); Zhang, RQ (Zhang Ri-Qing); Wu, JJ (Wu Jie-Jun); Cong, GW (Cong Guang-Wei); Pan, Y (Pan Yi) 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption 期刊论文 journal of applied physics, 1996, 卷号: 79, 期号: 2, 页码: 1073-1077 Yuan ZL; Xu ZY; Zheng BZ; Luo CP; Xu JZ; Ge WK; Zhang PH; Yang XP 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/17 MOLECULAR-BEAM EPITAXY  MONOLAYER-FLAT ISLANDS  SEMICONDUCTOR INTERFACES  EXCITON TRANSFER  TEMPERATURE  LINEWIDTH  DYNAMICS