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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文 applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901 作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H 收藏  |  浏览/下载：64/1  |  提交时间：2010/03/08 edge dislocations  gallium compounds  III-V semiconductors  impurities  photoluminescence  semiconductor doping  semiconductor thin films  silicon  wide band gap semiconductors  X-ray diffraction   Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111 Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：63/0  |  提交时间：2010/03/08 aluminium compounds  dislocation density  electron mobility  gallium compounds  III-V semiconductors  interface roughness  semiconductor heterojunctions  two-dimensional electron gas  wide band gap semiconductors   High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition 期刊论文 ieee journal of quantum electronics, 1999, 卷号: 35, 期号: 10, 页码: 1535-1541 Yang GW; Hwu RJ; Xu ZT; Ma XY 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 quantum-well lasers  semiconductor diodes  semiconductor epitaxial layers  semiconductor lasers  semiconductor materials  NM DIODE-LASERS  WAVE-GUIDE  AMPLIFIER  FRONT-FACET POWER