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In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides 期刊论文
Physical Review B, 2017, 卷号: 96, 期号: 16, 页码: 165402
作者:  Zhi-Qiang Fan;  Xiang-Wei Jiang;  Jun-Wei Luo;  Li-Ying Jiao;  Ru Huang
收藏  |  浏览/下载：48/0  |  提交时间：2018/06/15
Ab initio performance predictions of single-layer In–V tunnel field-effect transistors 期刊论文
Phys. Chem. Chem. Phys., 2017, 卷号: 19, 页码: 20121--20126
作者:  Juan Lu;  Zhi-Qiang Fan;  Jian Gong;  Xiang-Wei Jiang
收藏  |  浏览/下载：25/0  |  提交时间：2018/06/15
Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors 期刊论文
Journal of Applied Physics, 2017, 卷号: 121, 期号: 22, 页码: 1-5
作者:  Zhi Wang;  Liwei Wang;  Yunfei En;  Xiang-Wei Jiang
收藏  |  浏览/下载：19/0  |  提交时间：2018/06/15
Tuning crystal polymorphs of a π-extended tetrathiafulvalene-based cruciform molecule towards high-performance organic field-effect transistors 期刊论文
SCIENCE CHINA Materials - LETTERS, 2017, 卷号: 60, 期号: 1, 页码: 75–82
作者:  Linlin Feng;  Huanli Dong;  Qingyuan Li;  Weigang Zhu;  Gege Qiu
收藏  |  浏览/下载：33/0  |  提交时间：2018/06/15
Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires 期刊论文
acs nano, 2016, 卷号: 10, 期号: 8, 页码: 7451-7457
Xingqiang Liu; Xiaonian Yang; Guoyun Gao; Zhenyu Yang; Haitao Liu; Qiang Li; Zheng Lou; Guozhen Shen; Lei Liao; Caofeng Pan; Zhong Lin Wang
收藏  |  浏览/下载：31/0  |  提交时间：2017/03/10
Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides 期刊论文
acs appl mater interfaces, 2016, 卷号: 8, 期号: 24, 页码: 15574-15581
Yongtao Li; Yan Wang; Le Huang; Xiaoting Wang; Xingyun Li; Hui-Xiong Deng; Zhongming Wei; Jingbo Li
收藏  |  浏览/下载：23/0  |  提交时间：2017/03/16
Sulfur vacancy activated field effect transistors based on ReS2 nanosheets 期刊论文
Nanoscale, 2015, 卷号: 7, 期号: 38, 页码: 15757-15762
Kai Xu; Hui-Xiong Deng; Zhenxing Wang; Yun Huang; Feng Wang; Shu-Shen Li; Jun-Wei Luo; Jun He
收藏  |  浏览/下载：20/0  |  提交时间：2016/04/08
Sulfur vacancy activated field effect transistors based on ReS2 nanosheets 期刊论文
nanoscale, 2015, 卷号: 7, 期号: 38, 页码: 15757-15762
Kai Xu; Hui-Xiong Deng; Zhenxing Wang; Yun Huang; Feng Wang; Shu-Shen Li; Jun-Wei Luo; Jun He
收藏  |  浏览/下载：14/0  |  提交时间：2016/03/29
Contact properties of field-effect transistors based on InAs nanowire thinner than 16 nm 期刊论文
nanotechnology, 2015, 卷号: 26, 页码: 175202
Tuanwei Shi; Mengqi Fu; Dong Pan; Yao Guo; Jianhua Zhao; Qing Chen
收藏  |  浏览/下载：19/0  |  提交时间：2016/03/29
Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors 期刊论文
nanoscale, 2014, 卷号: 6, 期号: 13, 页码: 7226-7231
Yang, SX; Tongay, S; Li, Y; Yue, Q; Xia, JB; Li, SS; Li, JB; Wei, SH
收藏  |  浏览/下载：45/0  |  提交时间：2015/05/11

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