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| First principles study of the electronic properties of twinned SiC nanowires 期刊论文 journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191 作者: Li JB![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:101/6  |  提交时间:2011/07/05
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| Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths 期刊论文 chinese physics b, 2008, 卷号: 17, 期号: 12, 页码: 4645-4647 作者: Zhang Y ; Zhang Y![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:268/32  |  提交时间:2010/03/08
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| A study of the growth and optical properties of AlInGaN alloys 期刊论文 acta physica sinica, 2003, 卷号: 52, 期号: 10, 页码: 2632-2637 Huang JS; Dong X; Lu XL; Xu ZY; Ge WK
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:265/14  |  提交时间:2010/08/12
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| Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文 chinese physics letters, 2003, 卷号: 20, 期号: 11, 页码: 2061-2063 Fang ZD; Gong Z; Miao ZH; Xu XH; Ni HQ; Niu ZC
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:64/0  |  提交时间:2010/08/12
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| Selectively excited photoluminescence of GaAs1-xNx single quantum wells 期刊论文 journal of applied physics, 2003, 卷号: 94, 期号: 8, 页码: 4863-4865 作者: Tan PH![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:144/0  |  提交时间:2010/08/12
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| Localized exciton dynamics in AlInGaN alloy 期刊论文 solid state communications, 2003, 卷号: 126, 期号: 8, 页码: 473-477 Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:42/0  |  提交时间:2010/08/12
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| Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film 期刊论文 acta physica sinica, 2002, 卷号: 51, 期号: 7, 页码: 1564-1570 Wang YQ; Chen WD; Chen CY; Diao HW; Zhang SB; Xu YY; Kong GL; Liao XB
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
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| Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文 10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001 Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2010/10/29
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| Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 作者: Jiang DS![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
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| Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing 期刊论文 applied physics letters, 1999, 卷号: 75, 期号: 19, 页码: 2951-2953 Fan TW; Mo QW; Lin F; Wang ZG; Zhang W
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:58/0  |  提交时间:2010/08/12
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