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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206 Shi LJ; Zhu LF; Zhao YH; Liu BG 收藏  |  浏览/下载：218/56  |  提交时间：2010/03/08 ab initio calculations  aluminium compounds  annealing  band structure  chromium  Curie temperature  density functional theory  exchange interactions (electron)  ferromagnetic materials  III-V semiconductors  semimagnetic semiconductors  total energy  vacancies (crystal)   Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112 Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB 收藏  |  浏览/下载：26/0  |  提交时间：2010/03/08 P-TYPE GAN  MOLECULAR-BEAM EPITAXY  AUGMENTED-WAVE METHOD  VAPOR-PHASE EPITAXY  ELECTRICAL-PROPERTIES  OXYGEN  ACTIVATION  SILICON   Photoluminescence from ZnS1-xTex alloys under hydrostatic pressure 期刊论文 physical review b, 2002, 卷号: 66, 期号: 8, 页码: art.no.085203 Fang ZL; Li GH; Liu NZ; Zhu ZM; Han HX; Ding K; Ge WK; Sou IK 收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12 ZNS-TE  ABSORPTION-EDGE  MIXED-CRYSTALS  ZINC-SULFIDE  THIN-FILMS  TRANSITION  EXCITONS  CENTERS  STRAINS  BAND   The microstructure and its high-temperature annealing behaviours of a-Si : O : H film 期刊论文 acta physica sinica, 2001, 卷号: 50, 期号: 12, 页码: 2418-2422 Wang YQ; Chen CY; Chen WD; Yang FH; Diao HW 收藏  |  浏览/下载：83/6  |  提交时间：2010/08/12 a-Si : O : H  nc-Si  microstructure  annealing  CHEMICAL-VAPOR-DEPOSITION  AMORPHOUS SIO2  OPTICAL-PROPERTIES  SILICON   First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 会议论文 2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998 Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/15 strip detectors  silicon detectors  annealing  simulation  irradiation  N-EFF  JUNCTION DETECTORS  RADIATION-DAMAGE  MODELS   First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 期刊论文 nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1999, 卷号: 426, 期号: 1, 页码: 38-46 Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E 收藏  |  浏览/下载：28/0  |  提交时间：2010/08/12 strip detectors  silicon detectors  annealing  simulation  irradiation  JUNCTION DETECTORS  RADIATION-DAMAGE  MODELS  N-EFF   CALCULATION OF DISLOCATION PINNING FORCES IN INP WITH ISOVALENT IMPURITIES BY THE SOLID-SOLUTION HARDENING MODEL 期刊论文 chinese physics, 1989, 卷号: 9, 期号: 1, 页码: 254-259 YE SZ; YANG BH 收藏  |  浏览/下载：3/0  |  提交时间：2010/11/15