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科研机构
半导体研究所 [10]
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期刊论文 [10]
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2017 [1]
2011 [2]
2010 [1]
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半导体物理 [10]
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Rediscovering MP15 Family (M = Li; Na; and K) as an Anisotropic Layered Semiconducting Material
期刊论文
The Journal of Physical Chemistry Letters, 2017, 卷号: 9, 期号: 4, 页码: 732–738
作者:
Yanhan Yang
;
Nan Tian
;
Yongzhe Zhang
;
Danmin Liu
;
Dong Zhang
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  |  
浏览/下载:14/0
  |  
提交时间:2018/05/30
First principles study of the electronic properties of twinned SiC nanowires
期刊论文
journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191
作者:
Li JB
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  |  
浏览/下载:100/6
  |  
提交时间:2011/07/05
Twinned SiC nanowires
Electronic properties
Ab initio
Modeling and simulation
SILICON-CARBIDE NANOWIRES
FIELD-EMISSION PROPERTIES
MOLECULAR-BEAM EPITAXY
INAS NANOWIRES
GROWTH
NANOTUBES
NITRIDE
DIFFUSION
NANORODS
ENERGY
Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn
期刊论文
journal of crystal growth, 2011, 卷号: 316, 期号: 1, 页码: 145-148
Yang GD
;
Zhu F
;
Dong S
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  |  
浏览/下载:71/2
  |  
提交时间:2011/07/05
Diffusion
Physical vapor deposition processes
Magnetic materials
Semiconducting III-V materials
GASB/MN DIGITAL ALLOYS
ROOM-TEMPERATURE FERROMAGNETISM
RAMAN-SCATTERING
MAGNETOTRANSPORT PROPERTIES
EPITAXIAL LAYERS
THIN-FILMS
SEMICONDUCTORS
STRAIN
MAGNETOELECTRONICS
SPINTRONICS
First-principles prediction of the magnetism of 3d transition-metal-doped Rocksalt MgO
期刊论文
physics letters a, 2010, 卷号: 374, 期号: 10, 页码: 1292-1296
Shi LJ (Shi Li-Jie)
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  |  
浏览/下载:20/3
  |  
提交时间:2010/04/13
Ferromagnetism
Half-metal
Double-exchange mechanism
TEMPERATURE FERROMAGNETISM
ELECTRIC PROPERTIES
ZNO FILMS
II-VI
SEMICONDUCTORS
SPINTRONICS
MODEL
SPIN
GAS
Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy
期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Gao, HL
;
Zeng, YP
;
Wang, BQ
;
Zhu, ZP
;
Wang, ZG
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  |  
浏览/下载:54/6
  |  
提交时间:2010/03/08
molecular beam epitaxy
semiconducting III-V materials
high electron mobility transistors
Design of shallow acceptors in ZnO: First-principles band-structure calculations
期刊论文
physical review b, 2006, 卷号: 74, 期号: 8, 页码: art.no.081201
Li J (Li Jingbo)
;
Wei SH (Wei Su-Huai)
;
Li SS (Li Shu-Shen)
;
Xia JB (Xia Jian-Bai)
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  |  
浏览/下载:24/0
  |  
提交时间:2010/04/11
P-TYPE ZNO
TOTAL-ENERGY CALCULATIONS
WAVE BASIS-SET
II-VI
ROOM-TEMPERATURE
THIN-FILMS
SEMICONDUCTORS
FABRICATION
DEFECTS
DEVICES
Electronic structure of InSb quantum ellipsoids in an external magnetic field
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 57-63
Zhu YH (Zhu Y. H.)
;
Zhang XW (Zhang X. W.)
;
Xia JB (Xia J. B.)
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  |  
浏览/下载:37/0
  |  
提交时间:2010/04/11
InSb
quantum ellipsoid
g factor
LEVEL STRUCTURE
DOTS
SEMICONDUCTORS
NANOCRYSTALS
Positron-annihilation study of compensation defects in InP
期刊论文
journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 1998-2001
Shan YY
;
Deng AH
;
Ling CC
;
Fung S
;
Ling CD
;
Zhao YW
;
Sun TN
;
Sun NF
收藏
  |  
浏览/下载:99/9
  |  
提交时间:2010/08/12
UNDOPED SEMIINSULATING INP
INDIUM-PHOSPHIDE
LIFETIME
VACANCY
MECHANISMS
ACCEPTOR
GROWTH
GAAS
Energy bands and acceptor binding energies of GaN
期刊论文
physical review b, 1999, 卷号: 59, 期号: 15, 页码: 10119-10124
Xia JB
;
Cheah KW
;
Wang XL
;
Sun DZ
;
Kong MY
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  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
GALLIUM NITRIDE
MODEL
SEMICONDUCTORS
STATES
ALN
BAND-STRUCTURE OF MG1-XZNXSYSE1-Y
期刊论文
semiconductor science and technology, 1994, 卷号: 9, 期号: 4, 页码: 349-355
TEO KL
;
FENG YP
;
LI MF
;
CHONG TC
;
XIA JB
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
QUANTUM-WELL STRUCTURES
MOLECULAR-BEAM EPITAXY
ELECTRON CORRELATION
GAAS SUBSTRATE
SEMICONDUCTORS
ZNSE
ZNMGSSE
GROWTH
MASSES
GAP
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