QQ客服 官方微博 反馈留言

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503 作者:  Jiang XW 收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05 FIELD-EFFECT TRANSISTORS  SEMICONDUCTOR-DEVICES  SILICON DEVICES  MONTE-CARLO  MOSFETS  NANOTRANSISTORS  APPROXIMATION  EQUATIONS  DESIGN  MODELS   Exciton states of vertically stacked self-assembled InAs quantum disks in an axial magnetic field 期刊论文 physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 230-234 Dong QR; Li SS; Niu ZC; Feng SL 收藏  |  浏览/下载：39/0  |  提交时间：2010/04/11 exciton states  quantum disks  magnetic field  ELECTRONIC-STRUCTURE  FINE-STRUCTURE  DOT SYSTEMS   Nano-layer structure of silicon-on-insulator materials 期刊论文 journal of the korean physical society, 2003, 卷号: 42, 期号: 0, 页码: s713-s718 Wang X; Chen M; Chen J; Wang X; Dong YN; Liu XH; He P; Tian LL; Liu ZL 收藏  |  浏览/下载：26/0  |  提交时间：2010/08/12 SOI  nanostructure  microelectronic materials   Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文 chinese physics letters, 2003, 卷号: 20, 期号: 11, 页码: 2061-2063 Fang ZD; Gong Z; Miao ZH; Xu XH; Ni HQ; Niu ZC 收藏  |  浏览/下载：64/0  |  提交时间：2010/08/12 1.3 MU-M  MOLECULAR-BEAM EPITAXY  TEMPERATURE-DEPENDENCE  LASING CHARACTERISTICS  LASERS  WAVELENGTH  SEPARATION  LINEWIDTH  PROPERTY  GAIN   Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots 期刊论文 journal of physics-condensed matter, 2003, 卷号: 15, 期号: 31, 页码: 5383-5388 Gong Z; Fang ZD; Xu XH; Miao ZH; Niu ZC; Feng SL 收藏  |  浏览/下载：231/7  |  提交时间：2010/08/12 1.35 MU-M  ISLANDS  PHOTOLUMINESCENCE   Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer 期刊论文 solid state communications, 2003, 卷号: 126, 期号: 7, 页码: 391-394 作者:  Jin P;  Ye XL;  Li CM;  Xu B 收藏  |  浏览/下载：36/0  |  提交时间：2010/08/12 nanostructures  semiconductors  optical properties  EPITAXY   Luminescence properties of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文 physics of low-dimensional structures, 2003, 期号: 1-2, 页码: 27-33 Fang, ZD; Gong, Z; Miao, ZH; Xu, XH; Ni, HQ; Niu, ZC 收藏  |  浏览/下载：48/14  |  提交时间：2010/03/09 TEMPERATURE-DEPENDENCE  PHOTOLUMINESCENCE  SEPARATION  WAVELENGTH  LASERS   Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer 期刊论文 journal of applied physics, 2002, 卷号: 92, 期号: 1, 页码: 511-514 作者:  Jin P;  Li CM;  Ye XL;  Xu B 收藏  |  浏览/下载：57/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  1.3 MU-M  TEMPERATURE-DEPENDENCE  GROWTH  GAAS  LASERS   Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped GaAs/AlxGa1-xAs single quantum wells at high magnetic-fields 期刊论文 physical review b, 2001, 卷号: 64, 期号: 16, 页码: art.no.161303 Wang YJ; Leem YA; McCombe BD; Wu XG; Peeters FM; Jones ED; Reno JR; Lee XY; Jiang HW 收藏  |  浏览/下载：94/10  |  提交时间：2010/08/12 POLARON-CYCLOTRON-RESONANCE  GAAS-ALAS SUPERLATTICES  PHONON MODES  HETEROSTRUCTURES