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CORC

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Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2579-2582
Zhao H (Zhao Huan); Xu YQ (Xu Ying-Qiang); Ni HQ (Ni Hai-Qiao); Han Q (Han Qin); Wu RH (Wu Rong-Han); Niu ZC (Niu Zhi-Chuan)
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11
Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells 期刊论文
solid state communications, 2002, 卷号: 122, 期号: 5, 页码: 287-292
Wan SP; Xia JB
收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12
Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys 期刊论文
applied physics letters, 2001, 卷号: 79, 期号: 12, 页码: 1810-1812
Li Q; Xu SJ; Cheng WC; Xie MH; Tong SY; Che CM; Yang H
收藏  |  浏览/下载：79/7  |  提交时间：2010/08/12
Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation 期刊论文
applied physics letters, 2001, 卷号: 78, 期号: 17, 页码: 2509-2511
Sheng SR; Liao XB; Kong GL
收藏  |  浏览/下载：104/17  |  提交时间：2010/08/12
Quantum-confinement-effect-driven type-I-type-II transition in inhomogeneous quantum dot structures 期刊论文
physical review b, 2000, 卷号: 61, 期号: 7, 页码: 4743-4747
Kai C
收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12
Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001) 期刊论文
revista mexicana de fisica, 1998, 卷号: 44, 期号: 0, 页码: 85-88
Zou LF; Acosta-Ortiz SE; Zou LX; Regalado LE; Sun DZ; Wang ZG
收藏  |  浏览/下载：34/0  |  提交时间：2010/08/12
INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS 期刊论文
physical review b, 1992, 卷号: 46, 期号: 19, 页码: 12358-12364
WANG JQ; GU ZQ; LI MF; LAI WY
收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15

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