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科研机构
半导体研究所 [10]
内容类型
期刊论文 [10]
发表日期
2010 [4]
2009 [4]
2008 [2]
学科主题
半导体物理 [10]
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First-principles study of UC2 and U2C3
期刊论文
journal of nuclear materials, 2010, 卷号: 396, 期号: 2-3, 页码: 218-222
Shi HL (Shi Hongliang)
;
Zhang P (Zhang Ping)
;
Li SS (Li Shu-Shen)
;
Wang BT (Wang Baotian)
;
Sun B (Sun Bo)
收藏
  |  
浏览/下载:79/12
  |  
提交时间:2010/04/21
First-principle calculation
GGA plus U
Elastic constants
Chemical bonding
Valence state
BRILLOUIN-ZONE INTEGRATIONS
CARBIDES
SPECTRA
METALS
First-principles study of ground-state properties and high pressure behavior of ThO2
期刊论文
journal of nuclear materials, 2010, 卷号: 399, 期号: 2-3, 页码: 181-188
Wang BT (Wang Bao-Tian)
;
Shi HL (Shi Hongliang)
;
Li WD (Li Wei-Dong)
;
Zhang P (Zhang Ping)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/06/18
ELASTIC PROPERTIES
ACTINIDE DIOXIDES
THORIUM-DIOXIDE
SINGLE-CRYSTAL
STABILITY
Mechanical and chemical bonding properties of ground state BeH2
期刊论文
european physical journal b, 2010, 卷号: 74, 期号: 3, 页码: 303-308
Wang BT
;
Zhang P
;
Shi HL
;
Sun B
;
Li WD
收藏
  |  
浏览/下载:62/0
  |  
提交时间:2010/04/28
BERYLLIUM HYDRIDE
AB-INITIO
MGH2
Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057101
Deng HX (Deng Hui-Xiong)
;
Jiang XW (Jiang Xiang-Wei)
;
Tang LM (Tang Li-Ming)
收藏
  |  
浏览/下载:102/3
  |  
提交时间:2010/05/24
SIMULATION
TRANSISTORS
LIMIT
NM
Spin states in InAs/AlSb/GaSb semiconductor quantum wells
期刊论文
physical review b, 2009, 卷号: 80, 期号: 3, 页码: art. no. 035303
作者:
Li J
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  |  
浏览/下载:155/2
  |  
提交时间:2010/03/08
ELECTRON-HOLE SYSTEM
BAND-STRUCTURE
COMPOUND SEMICONDUCTORS
RELAXATION ANISOTROPY
GAP HETEROSTRUCTURES
OPTICAL-TRANSITIONS
GROUND-STATE
SUPERLATTICES
FIELD
HYBRIDIZATION
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC
;
Wang XL
;
Xiao HL
;
Ran JX
;
Wang CM
;
Ma ZY
;
Luo WJ
;
Wang ZG
收藏
  |  
浏览/下载:193/43
  |  
提交时间:2010/03/08
CONTENT ALGAN/GAN HETEROSTRUCTURES
CHEMICAL-VAPOR-DEPOSITION
FIELD-EFFECT TRANSISTORS
AL-CONTENT
ALGAN/ALN/GAN HETEROSTRUCTURES
HEMT STRUCTURES
PHASE EPITAXY
SAPPHIRE
GAS
DENSITIES
Electronic structures and mechanical properties of uranium monocarbide from first-principles LDA plus U and GGA plus U calculations
期刊论文
physics letters a, 2009, 卷号: 373, 期号: 39, 页码: 3577-3581
Shi HL
;
Zhang P
;
Li SS
;
Sun B
;
Wang BT
收藏
  |  
浏览/下载:55/1
  |  
提交时间:2010/03/08
First-principle calculation
LDA plus U
GGA plus U
Elastic constants
Phonon dispersion
Structural, elastic, and electronic properties of cubic perovskite BaHfO3 obtained from first principles
期刊论文
physica b-condensed matter, 2009, 卷号: 404, 期号: 16, 页码: 2192-2196
Zhao HS
;
Chang AM
;
Wang YL
收藏
  |  
浏览/下载:56/1
  |  
提交时间:2010/03/08
BaHfO3
Elastic properties
Electronic structures
First-principles calculations
A lattice dynamical treatment for the total potential energy of single-walled carbon nanotubes and its applications: relaxed equilibrium structure, elastic properties, and vibrational modes of ultra-narrow tubes
期刊论文
journal of physics-condensed matter, 2008, 卷号: 20, 期号: 4, 页码: art. no. 045228
Jiang, JW
;
Tang, H
;
Wang, BS
;
Su, ZB
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  |  
浏览/下载:115/3
  |  
提交时间:2010/03/08
NANOSCALE GRAPHITIC TUBULES
YOUNGS MODULUS
MECHANICAL-PROPERTIES
CHANNELS
RAMAN
CRYSTALS
STRAIN
Multiple valley couplings in nanometer Si metal-oxide-semiconductor field-effect transistors
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 12, 页码: art. no. 124507
Deng, HX
;
Jiang, XW
;
Luo, JW
;
Li, SS
;
Xia, JB
;
Wang, LW
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  |  
浏览/下载:66/5
  |  
提交时间:2010/03/08
SIMULATION
MOSFETS
SUPERLATTICES
REGIME
LIMIT
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