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Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载:35/2  |  提交时间:2011/07/05
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 2, 页码: art. no. 026102
作者:  Jiang DS;  Zhang SM;  Yang H;  Yang H;  Wang YT
收藏  |  浏览/下载:59/0  |  提交时间:2010/03/08
Monolithic integration of sampled grating DBR with electroabsorption modulator by combining selective-area-growth MOCVD and quantum-well intermixing 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 10, 页码: 3670-3672
Liu, HB; Zhao, LJ; Pan, JQ; Zhu, HL; Zhou, F; Wang, BJ; Wang, W
收藏  |  浏览/下载:19/0  |  提交时间:2010/03/08
Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 11, 页码: 4300-4304
作者:  Liang S;  Pan JQ
收藏  |  浏览/下载:58/0  |  提交时间:2010/03/08
Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 5, 页码: 1114-1119
作者:  Liang S;  Pan JQ
收藏  |  浏览/下载:51/0  |  提交时间:2010/04/11
Defects in GaN films grown on Si(111) substrates by metal-organic chemical vapour deposition 期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 10, 页码: 1811-1814
Hu GQ; Kong X; Wan L; Wang YQ; Duan XF; Lu Y; Liu XL
收藏  |  浏览/下载:251/3  |  提交时间:2010/08/12
Localized exciton dynamics in AlInGaN alloy 期刊论文
solid state communications, 2003, 卷号: 126, 期号: 8, 页码: 473-477
Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK
收藏  |  浏览/下载:42/0  |  提交时间:2010/08/12
Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy 期刊论文
solid-state electronics, 2002, 卷号: 46, 期号: 12, 页码: 2069-2074
作者:  Han PD
收藏  |  浏览/下载:39/0  |  提交时间:2010/08/12
ECR plasma in growth of cubic GaN by low pressure MOCVD 期刊论文
plasma chemistry and plasma processing, 2002, 卷号: 22, 期号: 1, 页码: 159-174
Gu B; Xu Y; Qin FW; Wang SS; Sui Y; Wang ZG
收藏  |  浏览/下载:78/7  |  提交时间:2010/08/12
Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate 期刊论文
applied physics letters, 2001, 卷号: 78, 期号: 25, 页码: 3974-3976
作者:  Han PD
收藏  |  浏览/下载:76/9  |  提交时间:2010/08/12


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