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科研机构
半导体研究所 [59]
内容类型
期刊论文 [53]
会议论文 [6]
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2014 [1]
2011 [4]
2010 [3]
2009 [1]
2008 [7]
2007 [3]
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半导体物理 [59]
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Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets
期刊论文
journal of materials chemistry c, 2014, 卷号: 2, 期号: 6, 页码: 1034-1040
Yang, JH
;
Lu, FY
;
Li, Y
;
Yang, SX
;
Li, RX
;
Huo, NJ
;
Fan, C
;
Wei, ZM
;
Li, JB
;
Li, SS
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  |  
浏览/下载:12/0
  |  
提交时间:2015/05/11
Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism
期刊论文
solid state communications, 2011, 卷号: 151, 期号: 6, 页码: 456-459
Wu H
;
Gan HD
;
Zheng HZ
;
Lu J
;
Zhu H
;
Ji Y
;
Li GR
;
Zhao JH
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  |  
浏览/下载:65/5
  |  
提交时间:2011/07/05
Magnetic semiconductors
Molecular beam epitaxy
Magneto-optical effects
TRANSPORT-PROPERTIES
SEMICONDUCTOR
(GA,CR)AS
Photoluminescence of CdSe nanowires grown with and without metal catalyst
期刊论文
nano research, 2011, 卷号: 4, 期号: 4, 页码: 343-359
作者:
Tan PH
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浏览/下载:53/5
  |  
提交时间:2011/07/05
CdSe
nanowires
photoluminescence
CHEMICAL-VAPOR-DEPOSITION
SHAPE-SELECTIVE SYNTHESIS
LIQUID-SOLID MECHANISM
OPTICAL-PROPERTIES
SILICON NANOWIRES
SI NANOWIRES
ZNSE NANOWIRES
SEMICONDUCTOR NANOCRYSTALS
STRUCTURAL-PROPERTIES
EPITAXIAL-GROWTH
Characteristics of heat generation in a quantum dot
期刊论文
physical review b, 2011, 卷号: 83, 期号: 19, 页码: article no.195303
Zhou LL
;
Li SS
;
Wei JN
;
Wang SQ
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  |  
浏览/下载:61/5
  |  
提交时间:2011/07/05
NANOSCALE CONDUCTORS
POWER DISSIPATION
JUNCTIONS
TRANSPORT
Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn
期刊论文
journal of crystal growth, 2011, 卷号: 316, 期号: 1, 页码: 145-148
Yang GD
;
Zhu F
;
Dong S
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  |  
浏览/下载:71/2
  |  
提交时间:2011/07/05
Diffusion
Physical vapor deposition processes
Magnetic materials
Semiconducting III-V materials
GASB/MN DIGITAL ALLOYS
ROOM-TEMPERATURE FERROMAGNETISM
RAMAN-SCATTERING
MAGNETOTRANSPORT PROPERTIES
EPITAXIAL LAYERS
THIN-FILMS
SEMICONDUCTORS
STRAIN
MAGNETOELECTRONICS
SPINTRONICS
STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS
期刊论文
journal of infrared and millimeter waves, 2010, 卷号: 29, 期号: 2, 页码: 87-
Yang W (Yang Wei)
;
Luo HH (Luo Hai-Hui)
;
Qian X (Qian Xuan)
;
Ji Y (Ji Yang)
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  |  
浏览/下载:78/0
  |  
提交时间:2010/05/24
microwave
reflectance
two-dimensional electron gas(2DEG)
cyclotron resonance
QUANTUM-WELLS
GAAS/ALGAAS HETEROSTRUCTURES
GERMANIUM
SILICON
Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition
期刊论文
vacuum, 2010, 卷号: 84, 期号: 11, 页码: 1280-1286
Zhu BL (Zhu B. L.)
;
Zhao XZ (Zhao X. Z.)
;
Su FH (Su F. H.)
;
Li GH (Li G. H.)
;
Wu XG (Wu X. G.)
;
Wu J (Wu J.)
;
Wu R (Wu R.)
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  |  
浏览/下载:94/2
  |  
提交时间:2010/07/05
ZnO
Pulsed laser deposition (PLD)
Annealing treatment
Photoluminescence (PL)
OXIDE THIN-FILMS
SUBSTRATE-TEMPERATURE
OXYGEN-PRESSURE
ELECTRICAL-PROPERTIES
PLD TECHNIQUE
AL FILMS
EMISSION
Tensile and compressive mechanical behavior of twinned silicon carbide nanowires
期刊论文
acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者:
Li JB
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  |  
浏览/下载:64/1
  |  
提交时间:2010/04/22
Twinning
Nanotructures
Fracture
Buckling
Molecular dynamics
CHEMICAL-VAPOR-DEPOSITION
AB-INITIO CALCULATIONS
BETA-SIC NANOWIRES
LOW-TEMPERATURE
THIN-FILMS
SIMULATION
ELASTICITY
NANOTUBES
POLYTYPES
GROWTH
Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912
Wang WZ
;
Deng JJ
;
Lu J
;
Sun BQ
;
Wu XG
;
Zhao JH
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  |  
浏览/下载:215/74
  |  
提交时间:2010/03/08
annealing
Curie temperature
ferromagnetic materials
gallium arsenide
III-V semiconductors
magnetic susceptibility
magnetisation
manganese compounds
nanofabrication
nanostructured materials
RKKY interaction
semiconductor thin films
semimagnetic semiconductors
spin dynamics
Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy
期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Gao, HL
;
Zeng, YP
;
Wang, BQ
;
Zhu, ZP
;
Wang, ZG
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  |  
浏览/下载:54/6
  |  
提交时间:2010/03/08
molecular beam epitaxy
semiconducting III-V materials
high electron mobility transistors
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