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Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:  Jiang XW
收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05
Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots 期刊论文
journal of physical chemistry c, 2010, 卷号: 114, 期号: 11, 页码: 4841-4845
Deng HX (Deng Hui-Xiong); Li SS (Li Shu-Shen); Li JB (Li Jingbo)
收藏  |  浏览/下载：79/17  |  提交时间：2010/04/13
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ; Zhu LF; Zhao YH; Liu BG
收藏  |  浏览/下载：217/56  |  提交时间：2010/03/08
Strain relaxation and band-gap tunability in ternary InxGa1-xN nanowires 期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 193301
作者:  Li JB
收藏  |  浏览/下载：209/43  |  提交时间：2010/03/08
Interdot interaction induced zero-bias maximum of the differential conductance in parallel double quantum dots 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 4, 页码: art.no.043705
Chi F; Li SS
收藏  |  浏览/下载：94/0  |  提交时间：2010/04/11
Electronic, structural, and optical properties of crystalline yttria 期刊论文
physical review b, 1997, 卷号: 56, 期号: 23, 页码: 14993-15000
Xu YN; Gu ZQ; Ching WY
收藏  |  浏览/下载：40/0  |  提交时间：2010/08/12
ELECTRON-STATES OF A VACANCY IN THE CORE OF THE 90-DEGREES PARTIAL DISLOCATION IN SILICON 期刊论文
physica status solidi b-basic research, 1995, 卷号: 189, 期号: 2, 页码: 473-477
MARKLUND S; WANG YL
收藏  |  浏览/下载：6/0  |  提交时间：2010/11/17
ELECTRONIC AND MAGNETIC-STRUCTURE OF THE TERNARY COMPOUND ND2FE17N 期刊论文
physical review b, 1992, 卷号: 46, 期号: 21, 页码: 13874-13880
GU ZQ; LAI WY; ZHONG XF; CHING WY
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15

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