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CORC

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Tensile and compressive mechanical behavior of twinned silicon carbide nanowires 期刊论文
acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者:  Li JB
收藏  |  浏览/下载：63/1  |  提交时间：2010/04/22
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ; Zhu LF; Zhao YH; Liu BG
收藏  |  浏览/下载：217/56  |  提交时间：2010/03/08
Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1120-1123
Dou, XM; Sun, BQ; Wang, BR; Ma, SS; Zhou, R; Huang, SS; Ni, HQ; Niu, ZC
收藏  |  浏览/下载：50/2  |  提交时间：2010/03/08
Abnormal energy dependence of photoluminescence decay time in InGaN epilayer 期刊论文
chinese physics letters, 2004, 卷号: 21, 期号: 12, 页码: 2529-2532
Huang, JS; Luo, XD; Yang, XD; Sun, Z; Sun, BQ; Xu, ZY; Ge, WK
收藏  |  浏览/下载：40/0  |  提交时间：2010/03/17
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文
1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003
Leung BH; Fong WK; Surya C; Lu LW; Ge WK
收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29
Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers 期刊论文
ieee photonics technology letters, 2003, 卷号: 15, 期号: 10, 页码: 1336-1338
作者:  Xu YQ
收藏  |  浏览/下载：395/1  |  提交时间：2010/08/12
Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文
ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK
收藏  |  浏览/下载：129/0  |  提交时间：2010/08/12
Micro-Raman study on hydrogenated protocrystalline silicon films 期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 8, 页码: 1811-1815
Zhang SB; Liao XB; An L; Yang FH; Kong GL; Wang YQ; Xu YY; Chen CY; Diao HW
收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12
Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer 期刊论文
applied physics letters, 1998, 卷号: 72, 期号: 1, 页码: 109-111
Wang LS; Liu XL; Zan YD; Wang J; Wang D; Lu DC; Wang ZG
收藏  |  浏览/下载：32/0  |  提交时间：2010/08/12
Electronic states of a two-dimensional electron system in a lateral superlattice and a perpendicular magnetic field 期刊论文
physical review b, 1997, 卷号: 56, 期号: 24, 页码: 15744-15751
Wu XG
收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12

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