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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文 chinese physics b, 2014, 卷号: 23, 期号: 1, 页码: 017805 Xing, JL; Zhang, Y; Xu, YQ; Wang, GW; Wang, J; Xiang, W; Ni, HQ; Ren, ZW; He, ZH; Niu, ZC 收藏  |  浏览/下载：14/0  |  提交时间：2015/05/11 Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18102 作者:  Li MF 收藏  |  浏览/下载：106/7  |  提交时间：2011/07/05 molecular beam epitaxy  anti-phase domain  GaAs/Ge interface  CHEMICAL VAPOR-DEPOSITION  JUNCTION SOLAR-CELLS  DOMAIN-FREE GROWTH  TEMPERATURE  QUALITY  FUTURE   1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG 收藏  |  浏览/下载：224/60  |  提交时间：2010/03/29 IMPROVED LUMINESCENCE EFFICIENCY  TEMPERATURE  PHOTOLUMINESCENCE  NITROGEN  ORIGIN  DIODES   Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 4, 页码: 1005-1008 作者:  Yang XH 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 LASERS  TEMPERATURE  PHOTOLUMINESCENCE   GaAs-based room-temperature continuous-wave 1.59 mu m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy 期刊论文 applied physics letters, 2005, 卷号: 87, 期号: 23, 页码: art.no.231121 Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; Zhao, H; Peng, HL; Xu, YQ; Li, SY; He, ZH; Ren, ZW; Han, Q; Yang, XH; Du, Y; Wu, RH 收藏  |  浏览/下载：130/37  |  提交时间：2010/03/17 High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy 期刊论文 applied physics letters, 2005, 卷号: 87, 期号: 16, 页码: art.no.161911 Zhang SY; Niu ZC; Ni HQ; Wu DH; He ZH; Sun Z; Han Q; Wu RH 收藏  |  浏览/下载：107/35  |  提交时间：2010/03/17 IMPROVED LUMINESCENCE EFFICIENCY   Molecular beam epitaxy growth and photoluminescence of type-II (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well 期刊论文 chinese physics letters, 2004, 卷号: 21, 期号: 9, 页码: 1831-1834 Xu, XH; Niu, ZC; Ni, HQ; Xu, YQ; Zhang, W; He, ZH; Han, Q; Wu, RH 收藏  |  浏览/下载：211/60  |  提交时间：2010/03/09 LONG-WAVELENGTH LASERS