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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy 期刊论文 applied physics letters, 2014, 卷号: 104, 期号: 5, 页码: 052111 Wang, J; Xing, JL; Xiang, W; Wang, GW; Xu, YQ; Ren, ZW; Niu, ZC 收藏  |  浏览/下载：24/0  |  提交时间：2015/03/19 Resonant subband Landau level coupling in symmetric quantum well 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083502 Tung LC (Tung L. -C.); Wu XG (Wu X. -G.); Pfeiffer LN (Pfeiffer L. N.); West KW (West K. W.); Wang YJ (Wang Y. -J.) 收藏  |  浏览/下载：30/0  |  提交时间：2010/12/05 TILTED MAGNETIC-FIELDS  ELECTRON-GAS  DEPOLARIZATION SHIFT  CYCLOTRON-RESONANCE  MATRIX-ELEMENTS  HETEROJUNCTIONS  SPECTROSCOPY  TECHNOLOGY  ABSORPTION  SYSTEMS   Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations 期刊论文 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403 作者:  Li JB;  Hou QF 收藏  |  浏览/下载：66/11  |  提交时间：2010/03/08 N-TYPE GAN  ELECTRON-MOBILITY TRANSISTORS  VAPOR-PHASE EPITAXY  DEFECTS  THERMOLUMINESCENCE  CARBON  TRAP   Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者:  Qian X 收藏  |  浏览/下载：82/7  |  提交时间：2010/03/08 aluminium compounds  carrier lifetime  gallium arsenide  high-frequency effects  III-V semiconductors  optical Kerr effect  semiconductor heterojunctions  spin dynamics  two-dimensional electron gas   First-principles study of p-type transparent conductive oxides CuXO2 (X=Y, Sc, and Al) 期刊论文 journal of applied physics, 2008, 卷号: 104, 期号: 7, 页码: art. no. 073527 Shi, LJ; Fang, ZJ; Li, JB 收藏  |  浏览/下载：65/0  |  提交时间：2010/03/08 AUGMENTED-WAVE METHOD  DELAFOSSITE STRUCTURE  ELECTRONIC-STRUCTURE  V SEMICONDUCTORS  THIN-FILMS  II-VI  CUSCO2  CUALO2  ENERGY  CUYO2   Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well 期刊论文 acta physica sinica, 2008, 卷号: 57, 期号: 8, 页码: 5232-5236 Shang, LY; Lin, T; Zhou, WZ; Li, DL; Gao, HL; Zeng, YP; Guo, SL; Yu, GL; Chu, JH 收藏  |  浏览/下载：86/0  |  提交时间：2010/03/08 two-dimensional electron gas  positive magnetoresistance  intersubband scattering   Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111 Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08 aluminium compounds  dislocation density  electron mobility  gallium compounds  III-V semiconductors  interface roughness  semiconductor heterojunctions  two-dimensional electron gas  wide band gap semiconductors   Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates 期刊论文 journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 2429-2432 Cui LJ; Zeng YP; Wang BQ; Wu J; Zhu ZP; Lin LY 收藏  |  浏览/下载：70/6  |  提交时间：2010/08/12 HEMTS