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半导体研究所 [17]

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半导体物理 [17]

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限定条件	学科主题：半导体物理

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	The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文 physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155 作者: Li JB 收藏 \| 浏览/下载：59/6 \| 提交时间：2011/07/05 First principle calculation Indium nitride Band gap Defect INITIO MOLECULAR-DYNAMICS AUGMENTED-WAVE METHOD INDIUM NITRIDE GAP PSEUDOPOTENTIALS SEMICONDUCTORS IMPURITIES ABSORPTION DEFECTS ALLOYS
	Influence of window layer thickness on double layer antireflection coating for triple junction solar cells 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 66001 Wang, Lijuan; Zhan, Feng; Yu, Ying; Zhu, Yan; Liu, Shaoqing; Huang, Shesong; Ni, Haiqiao; Niu, Zhichuan 收藏 \| 浏览/下载：21/0 \| 提交时间：2012/06/14 Antireflection coatings Coatings Gallium Optimization Silicon compounds Titanium dioxide Transfer matrix method Zinc sulfide
	Co doping enhanced giant magnetocaloric effect in Mn1-xCoxAs films epitaxied on GaAs (001) 期刊论文 applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: art. no. 042502 Xu PF (Xu P. F.); Nie SH (Nie S. H.); Meng KK (Meng K. K.); Wang SL (Wang S. L.); Chen L (Chen L.); Zhao JH (Zhao J. H.) 收藏 \| 浏览/下载：92/4 \| 提交时间：2010/09/07 cobalt compounds doping entropy gallium arsenide magnetic epitaxial layers magnetocaloric effects manganese compounds molecular beam epitaxial growth
	Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912 Wang WZ; Deng JJ; Lu J; Sun BQ; Wu XG; Zhao JH 收藏 \| 浏览/下载：213/74 \| 提交时间：2010/03/08 annealing Curie temperature ferromagnetic materials gallium arsenide III-V semiconductors magnetic susceptibility magnetisation manganese compounds nanofabrication nanostructured materials RKKY interaction semiconductor thin films semimagnetic semiconductors spin dynamics
	Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 2, 页码: art. no. 023104 作者: Zhu JJ; Zhang SM; Jiang DS; Zhao DG; Yang H 收藏 \| 浏览/下载：191/56 \| 提交时间：2010/03/08 aluminium compounds claddings gallium compounds III-V semiconductors indium compounds quantum well lasers refractive index waveguide lasers
	Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 142109 作者: Zhang XH; Chen L 收藏 \| 浏览/下载：109/22 \| 提交时间：2010/03/08 Curie temperature ferromagnetic materials gallium compounds Kerr magneto-optical effect magnetic relaxation magnetic thin films manganese compounds semimagnetic semiconductors spin dynamics time resolved spectra
	Anisotropy of magnetic properties in ferrimagnetic ytterbium iron garnet under high magnetic fields 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083909 Wang W; Yue Y; Li DY 收藏 \| 浏览/下载：74/1 \| 提交时间：2010/03/08 crystal field interactions garnets magnetic anisotropy spontaneous magnetisation superexchange interactions ytterbium compounds
	Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者: Qian X 收藏 \| 浏览/下载：80/7 \| 提交时间：2010/03/08 aluminium compounds carrier lifetime gallium arsenide high-frequency effects III-V semiconductors optical Kerr effect semiconductor heterojunctions spin dynamics two-dimensional electron gas
	Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文 applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901 作者: Yang H; Wang H; Wang H; Wang YT; Yang H 收藏 \| 浏览/下载：64/1 \| 提交时间：2010/03/08 edge dislocations gallium compounds III-V semiconductors impurities photoluminescence semiconductor doping semiconductor thin films silicon wide band gap semiconductors X-ray diffraction
	Ultrafast dynamics of four-state magnetization reversal in (Ga,Mn)As 期刊论文 applied physics letters, 2009, 卷号: 95, 期号: 5, 页码: art. no. 052108 作者: Zhang XH 收藏 \| 浏览/下载：78/1 \| 提交时间：2010/03/08 gallium arsenide high-speed optical techniques III-V semiconductors Kerr magneto-optical effect magnetic domain walls magnetic switching magnetic thin films magnetisation reversal manganese compounds nucleation optical pumping semiconductor thin films semimagnetic semiconductors

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