×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [19]
内容类型
期刊论文 [19]
发表日期
2011 [1]
2010 [2]
2009 [3]
2008 [3]
2007 [1]
2006 [1]
更多...
学科主题
半导体物理 [19]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共19条,第1-10条
帮助
限定条件
学科主题:半导体物理
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
First principles study of the electronic properties of twinned SiC nanowires
期刊论文
journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191
作者:
Li JB
收藏
  |  
浏览/下载:100/6
  |  
提交时间:2011/07/05
Twinned SiC nanowires
Electronic properties
Ab initio
Modeling and simulation
SILICON-CARBIDE NANOWIRES
FIELD-EMISSION PROPERTIES
MOLECULAR-BEAM EPITAXY
INAS NANOWIRES
GROWTH
NANOTUBES
NITRIDE
DIFFUSION
NANORODS
ENERGY
Defects in gallium nitride nanowires: First principles calculations
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044305
Wang ZG (Wang Zhiguo)
;
Li JB (Li Jingbo)
;
Gao F (Gao Fei)
;
Weber WJ (Weber William J.)
收藏
  |  
浏览/下载:105/1
  |  
提交时间:2010/10/11
CHEMICAL-VAPOR-DEPOSITION
GAN NANOWIRES
NATIVE DEFECTS
COMPLEXES
EPITAXY
GROWTH
ARRAYS
Codoping of magnesium with oxygen in gallium nitride nanowires
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 10, 页码: art. no. 103112
Wang ZG (Wang Zhiguo)
;
Li JB (Li Jingbo)
;
Gao F (Gao Fei)
;
Weber WJ (Weber William J.)
收藏
  |  
浏览/下载:30/3
  |  
提交时间:2010/04/13
MOLECULAR-BEAM EPITAXY
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC
;
Wang XL
;
Xiao HL
;
Ran JX
;
Wang CM
;
Ma ZY
;
Luo WJ
;
Wang ZG
收藏
  |  
浏览/下载:193/43
  |  
提交时间:2010/03/08
CONTENT ALGAN/GAN HETEROSTRUCTURES
CHEMICAL-VAPOR-DEPOSITION
FIELD-EFFECT TRANSISTORS
AL-CONTENT
ALGAN/ALN/GAN HETEROSTRUCTURES
HEMT STRUCTURES
PHASE EPITAXY
SAPPHIRE
GAS
DENSITIES
Controlling electronic structures by irradiation in single-walled SiC nanotubes: a first-principles molecular dynamics study
期刊论文
nanotechnology, 2009, 卷号: 20, 期号: 7, 页码: art. no. 075708
作者:
Li JB
收藏
  |  
浏览/下载:164/21
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
SILICON-CARBIDE NANOTUBES
FORMATION ENERGIES
CARBON NANOTUBES
BORON-NITRIDE
NANOWIRES
COMPOSITES
DEFECTS
FUSION
Ultrafast dynamics of four-state magnetization reversal in (Ga,Mn)As
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 5, 页码: art. no. 052108
作者:
Zhang XH
收藏
  |  
浏览/下载:78/1
  |  
提交时间:2010/03/08
gallium arsenide
high-speed optical techniques
III-V semiconductors
Kerr magneto-optical effect
magnetic domain walls
magnetic switching
magnetic thin films
magnetisation reversal
manganese compounds
nucleation
optical pumping
semiconductor thin films
semimagnetic semiconductors
Monolithic integration of sampled grating DBR with electroabsorption modulator by combining selective-area-growth MOCVD and quantum-well intermixing
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 10, 页码: 3670-3672
Liu, HB
;
Zhao, LJ
;
Pan, JQ
;
Zhu, HL
;
Zhou, F
;
Wang, BJ
;
Wang, W
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/03/08
TUNING RANGE
LASERS
TRANSMITTER
PERFORMANCE
MOVPE
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P
;
Gai, YQ
;
Wang, JX
;
Yang, FH
;
Zeng, YP
;
Li, JM
;
Li, JB
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/03/08
P-TYPE GAN
MOLECULAR-BEAM EPITAXY
AUGMENTED-WAVE METHOD
VAPOR-PHASE EPITAXY
ELECTRICAL-PROPERTIES
OXYGEN
ACTIVATION
SILICON
High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth
期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 1, 页码: 323-327
She-Song, H
;
Zhi-Chuan, N
;
Feng, Z
;
Hai-Qiao, N
;
Huan, Z
;
Dong-Hai, W
;
Zheng, S
收藏
  |  
浏览/下载:42/3
  |  
提交时间:2010/03/08
molecular beam epitaxy
quantum dots
a modified two-step growth
MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 21, 页码: 6690-6693
Hao RT (Hao Ruiting)
;
Xu YQ (Xu Yingqiang)
;
Zhou ZQ (Zhou Zhiqiang)
;
Ren ZW (Ren Zhengwei)
;
Ni HQ (Ni Haiqiao)
;
He ZH (He Zhenhong)
;
Niu ZC (Niu Zhichuan)
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2010/03/29
MOLECULAR-BEAM EPITAXY
©版权所有 ©2017 CSpace - Powered by
CSpace