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| Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE 会议论文
international conference on superlattices nano-structures and nano-devices (icsnn-02), toulouse, france, jul 22-26, 2002
Lan Q; Niu ZC; Zhou DY; Kong YC; Wang XD; Miao ZH; Feng SL
  收藏 | 浏览/下载：28/0 | 提交时间：2010/11/15 |
| Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE 期刊论文
physica e-low-dimensional systems & nanostructures, 2003, 卷号: 17, 期号: 1-4, 页码: 114-116
Lan Q; Niu ZC; Zhou DY; Kong YC; Wang XD; Miao ZH; Feng SL
收藏 | 浏览/下载：46/0 | 提交时间：2010/08/12
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| Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation 期刊论文
applied physics letters, 2003, 卷号: 82, 期号: 2, 页码: 206-208
Feng ZH; Yang H; Zheng XH; Fu Y; Sun YP; Shen XM; Wang YT
收藏 | 浏览/下载：21/0 | 提交时间：2010/08/12
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| Different transfer paths for thermally activated electrons and holes in self-organized Ge/Si(001) islands in a multilayer structure 期刊论文
applied physics letters, 2001, 卷号: 78, 期号: 14, 页码: 2006-2008
Huang CJ; Tang Y; Li DZ; Cheng BW; Luo LP; Yu JZ; Wang QM
收藏 | 浏览/下载：85/7 | 提交时间：2010/08/12
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| Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001
Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL
收藏 | 浏览/下载：12/0 | 提交时间：2010/10/29
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| A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy 期刊论文
chinese physics letters, 2001, 卷号: 18, 期号: 4, 页码: 608-610
Wang XD; Niu ZC; Feng SL; Miao ZH
收藏 | 浏览/下载：88/5 | 提交时间：2010/08/12
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| Effects of piezoelectricity and spontaneous polarization on electronic and optical properties of wurtzite III-V nitride quantum wells 期刊论文
journal of applied physics, 2001, 卷号: 90, 期号: 12, 页码: 6210-6216
Wan SP; Xia JB; Chang K
收藏 | 浏览/下载：123/9 | 提交时间：2010/08/12
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| Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots 期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 2000, 卷号: 39, 期号: 9a, 页码: 5076-5079
Wang XD; Niu ZC; Feng SL
收藏 | 浏览/下载：64/0 | 提交时间：2010/08/12
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| Study of self-assembled InAs quantum dot structure covered by InxGa1-xAs(0 <= x <= 0.3) capping layer 期刊论文
acta physica sinica, 2000, 卷号: 49, 期号: 11, 页码: 2230-2234
Wang XD; Liu HY; Niu ZC; Feng SL
收藏 | 浏览/下载：36/0 | 提交时间：2010/08/12
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| Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1-xAs (0 <= x <= 0.3) 期刊论文
journal of applied physics, 2000, 卷号: 88, 期号: 6, 页码: 3392-3395
作者: Xu B ; Ye XL
收藏 | 浏览/下载：46/0 | 提交时间：2010/08/12
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