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CORC

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GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 33, 页码: 335102
He JF; Wang HL; Shang XJ; Li MF; Zhu Y; Wang LJ; Yu Y; Ni HQ; Xu YQ; Niu ZC
收藏  |  浏览/下载：24/0  |  提交时间：2012/01/06
The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文
chinese physics b, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Jiang DS (Jiang De-Sheng); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Wang H (Wang Hui); Chen GF (Chen Gui-Feng); Yang H (Yang Hui)
收藏  |  浏览/下载：130/35  |  提交时间：2010/03/08
GaN  
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901
作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H
收藏  |  浏览/下载：64/1  |  提交时间：2010/03/08
Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111
Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08
Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.094302
作者:  Jiang DS
收藏  |  浏览/下载：36/0  |  提交时间：2010/04/11
Generation and behavior of pure-edge threading misfit dislocations in InxGa1-xN/GaN multiple quantum wells 期刊论文
journal of applied physics, 2004, 卷号: 96, 期号: 9, 页码: 5267-5270
作者:  Li DB
收藏  |  浏览/下载：53/17  |  提交时间：2010/03/09
Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells 期刊论文
journal of applied physics, 2004, 卷号: 95, 期号: 8, 页码: 4362-4366
Lu, W; Li, DB; Li, CR; Shen, F; Zhang, Z
收藏  |  浏览/下载：303/45  |  提交时间：2010/03/09
Defects in GaN films grown on Si(111) substrates by metal-organic chemical vapour deposition 期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 10, 页码: 1811-1814
Hu GQ; Kong X; Wan L; Wang YQ; Duan XF; Lu Y; Liu XL
收藏  |  浏览/下载：251/3  |  提交时间：2010/08/12
Effects of annealing on self-organized InAs quantum islands on GaAs (100) 期刊论文
applied physics letters, 1998, 卷号: 73, 期号: 24, 页码: 3518-3520
Mo QW; Fan TW; Gong Q; Wu J; Wang ZG; Bai YQ
收藏  |  浏览/下载：43/0  |  提交时间：2010/08/12
Observation of defects in GaN epilayers 期刊论文
defect recognition and image processing in semiconductors 1997, 1998, 卷号: 160, 期号: 0, 页码: 347-350
Kang JY; Liu XL; Ogawa T
收藏  |  浏览/下载：32/0  |  提交时间：2010/08/12

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