CORC

浏览/检索结果: 共10条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Origins of magnetism in transition metal doped Cul 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043713
Wang J (Wang Jing); Li JB (Li Jingbo); Li SS (Li Shu-Shen)
收藏  |  浏览/下载:86/0  |  提交时间:2010/10/11
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载:193/43  |  提交时间:2010/03/08
Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 7, 页码: art. no. 076104
作者:  Wang LJ;  Yang H;  Jiang DS;  Zhao DG;  Zhang SM
收藏  |  浏览/下载:79/0  |  提交时间:2010/03/08
Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 9, 页码: 3440-3443
Dou, XM; Sun, BQ; Xiong, YH; Huang, SS; Ni, HQ; Niu, ZC
收藏  |  浏览/下载:70/1  |  提交时间:2010/03/08
Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 5, 页码: 1114-1119
作者:  Liang S;  Pan JQ
收藏  |  浏览/下载:48/0  |  提交时间:2010/04/11
Silicon doping induced increment of quantum dot density 期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 2003, 卷号: 42, 期号: 10, 页码: 6314-6318
作者:  Duan RF
收藏  |  浏览/下载:47/0  |  提交时间:2010/08/12
Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2000, 卷号: 88, 期号: 9, 页码: 5433-5436
作者:  Xu B
收藏  |  浏览/下载:42/0  |  提交时间:2010/08/12
Observation of the third subband population in modulation-doped InGaAs/InAlAs heterostructure 期刊论文
chinese physics letters, 1998, 卷号: 15, 期号: 1, 页码: 57-59
作者:  Xu B
收藏  |  浏览/下载:38/0  |  提交时间:2010/08/12
Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells 期刊论文
solid state communications, 1998, 卷号: 106, 期号: 12, 页码: 811-814
作者:  Xu B
收藏  |  浏览/下载:57/0  |  提交时间:2010/08/12
The third subband population in modulation-doped InGaAs/InAlAs heterostructures 期刊论文
journal of applied physics, 1997, 卷号: 82, 期号: 12, 页码: 6107-6109
作者:  Xu B
收藏  |  浏览/下载:34/0  |  提交时间:2010/08/12


©版权所有 ©2017 CSpace - Powered by CSpace