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科研机构
半导体研究所 [20]
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期刊论文 [19]
会议论文 [1]
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2011 [1]
2009 [5]
2008 [2]
2006 [1]
2003 [1]
2002 [3]
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半导体物理 [20]
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Study on Optical Properties of Type-II SnO2/ZnS Core/Shell Nanowires
期刊论文
journal of physical chemistry c, 2011, 卷号: 115, 期号: 15, 页码: 7225-7229
作者:
Li JB
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  |  
浏览/下载:38/2
  |  
提交时间:2011/07/05
COLLOIDAL NANOCRYSTAL HETEROSTRUCTURES
PHOTOLUMINESCENCE PROPERTIES
LATTICE DYNAMICS
TIN OXIDE
FILMS
NANOSTRUCTURES
SPECTRA
EXCITON
ARRAYS
RUTILE
Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: art. no. 094903
Li MC
;
Qiu YX
;
Liu GJ
;
Wang YT
;
Zhang BS
;
Zhao LC
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/03/08
X-RAY-DIFFRACTION
MOLECULAR-BEAM-EPITAXY
FILMS
MISFIT
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
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  |  
浏览/下载:71/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:
Chen L
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  |  
浏览/下载:79/0
  |  
提交时间:2010/03/08
annealing
gallium arsenide
iron
magnetic anisotropy
magnetic epitaxial layers
magnetisation
molecular beam epitaxial growth
transmission electron microscopy
X-ray diffraction
Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface
期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 42, 期号: 2, 页码: 150-153
作者:
Chen L
;
Zhang XH
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  |  
浏览/下载:34/0
  |  
提交时间:2010/04/04
Fe thin film
Anisotropic strain relaxation
Magnetic anisotropy
X-ray diffraction
UNIAXIAL MAGNETIC-ANISOTROPY
EPITAXIAL-GROWTH
GAAS(001)
DEVICES
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901
作者:
Yang H
;
Wang H
;
Wang H
;
Wang YT
;
Yang H
收藏
  |  
浏览/下载:64/1
  |  
提交时间:2010/03/08
edge dislocations
gallium compounds
III-V semiconductors
impurities
photoluminescence
semiconductor doping
semiconductor thin films
silicon
wide band gap semiconductors
X-ray diffraction
Raman and infrared properties and layer dependence of the phonon dispersions in multilayered graphene
期刊论文
physical review b, 2008, 卷号: 77, 期号: 23, 页码: art. no. 235421
Jiang, JW
;
Tang, H
;
Wang, BS
;
Su, ZB
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  |  
浏览/下载:73/11
  |  
提交时间:2010/03/08
LATTICE-DYNAMICS
GRAPHITE
FILMS
Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4143-4146
Zhao, DG
;
Jiang, DS
;
Zhu, JJ
;
Liu, ZS
;
Zhang, SM
;
Wang, YT
;
Yang, H
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/03/08
X-RAY-DIFFRACTION
EPITAXIAL GAN
DEPENDENCE
PHOTOLUMINESCENCE
GROWTH
FILMS
Interfaces in heterostructures of AlInGaN/GaN/Al2O3
期刊论文
superlattices and microstructures, 2006, 卷号: 39, 期号: 5, 页码: 429-435
Zhou SQ
;
Wu MF
;
Yao SD
;
Liu JP
;
Yang H
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  |  
浏览/下载:47/0
  |  
提交时间:2010/04/11
nitride semiconductors
interface
Rutherford backscattering/channeling
transmission electron microscopy
x-ray diffraction
SUPER-LATTICES
STRAIN
GAN
Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique
期刊论文
science in china series g-physics astronomy, 2003, 卷号: 46, 期号: 4, 页码: 437-440
作者:
Zhao DG
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  |  
浏览/下载:199/6
  |  
提交时间:2010/08/12
GaN
x-ray diffraction
thickness
SAPPHIRE
GROWTH
FILMS
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