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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films 期刊论文 journal of magnetism and magnetic materials, 2010, 卷号: 322, 期号: 21, 页码: 3250-3254 Chen L (Chen L.); Yan S (Yan S.); Xu PF (Xu P. F.); Lu J (Lu J.); Deng JJ (Deng J. J.); Ji Y (Ji Y.); Wang KY (Wang K. Y.); Zhao JH (Zhao J. H.) 收藏  |  浏览/下载：94/4  |  提交时间：2010/09/07 Magnetic semiconductor  Magnetic anisotropy  Magneto-transport phenomenon  Molecular-beam epitaxy   Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：74/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Modulation magnesium-doping in AlGaN/GaN superlattices 会议论文 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 Liu XL; Yuan HR; Lu DC; Wang XH 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 Mg-doped  AlGaN/GaN superlattices  resistivity  hole concentration  POLARIZATION   First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 会议论文 2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998 Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E 收藏  |  浏览/下载：19/0  |  提交时间：2010/11/15 strip detectors  silicon detectors  annealing  simulation  irradiation  N-EFF  JUNCTION DETECTORS  RADIATION-DAMAGE  MODELS   Effect of temperature on implant isolation characteristics of AlGaAs/GaAs multilayer heterojunction structure 期刊论文 defect recognition and image processing in semiconductors 1995, 1996, 卷号: 149, 期号: 0, 页码: 85-90 Xu HD; Wang S; Zheng D; Liu HZ; Zhou LS 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/17 GAAS