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A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy 期刊论文
chinese physics letters, 2001, 卷号: 18, 期号: 4, 页码: 608-610
Wang XD; Niu ZC; Feng SL; Miao ZH
收藏  |  浏览/下载:89/5  |  提交时间:2010/08/12
Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks 期刊论文
solid state communications, 2000, 卷号: 116, 期号: 4, 页码: 201-206
Zhang B; Fang W; Wang DJ; Luan F; Xu SF; Qian Y; Zhu X; Ma XY
收藏  |  浏览/下载:52/0  |  提交时间:2010/08/12


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