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CORC

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High Quality Pseudomorphic In-0.24 GaAs/GaAs Multi-Quantum-Well and Large-Area Transmission Electro-Absorption Modulators 期刊论文
chinese physics letters, 2013, 卷号: 30, 期号: 4, 页码: 046102
Yang Xiao-Hong; Liu Shao-Qing; Ni Hai-Qiao; Li Mi-Feng; Li Liang; Han Qin; Niu Zhi-Chuan
收藏  |  浏览/下载：12/0  |  提交时间：2013/09/17
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 6, 页码: art. no. 064211
作者:  Wang Y;  Pan JQ
收藏  |  浏览/下载：113/0  |  提交时间：2010/03/08
Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 5, 页码: art. no. 055310
作者:  Ye XL;  Pan JQ;  Liang S
收藏  |  浏览/下载：128/30  |  提交时间：2010/03/08
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB
收藏  |  浏览/下载：26/0  |  提交时间：2010/03/08
Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 4, 页码: 1281-1283
作者:  Ji L;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载：60/5  |  提交时间：2010/03/08
Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well 期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 4, 页码: 2044-2048
Zhou WZ; Yao W; Zhu B; Qiu ZJ; Guo SL; Lin T; Cui LJ; Gui YS; Chu JH
收藏  |  浏览/下载：58/0  |  提交时间：2010/04/11
Comparative study for colloidal quantum dot conduction band state calculations 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 14, 页码: art.no.143108
Luo JW; Li SS; Xia JB; Wang LW
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 4, 页码: 1140-1145
Gong Z; Niu ZC; Fang ZD
收藏  |  浏览/下载：73/0  |  提交时间：2010/04/11
Room temperature 1.25 mu m emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2005, 卷号: 278, 期号: 1-4, 页码: 728-733
作者:  Xu YQ
收藏  |  浏览/下载：18/0  |  提交时间：2010/03/17
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Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction 期刊论文
acta physica sinica, 2000, 卷号: 49, 期号: 12, 页码: 2374-2377
Lian P; Yin T; Gao G; Zou DS; Chen CH; Li JJ; Shen GD; Ma XY; Chen LH
收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12

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