×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [43]
内容类型
期刊论文 [32]
会议论文 [11]
发表日期
2011 [1]
2010 [1]
2009 [1]
2008 [2]
2007 [1]
2006 [6]
更多...
学科主题
半导体材料 [43]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共43条,第1-10条
帮助
限定条件
学科主题:半导体材料
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301
作者:
Liu XF
;
Yan GG
;
Zheng L
;
Dong L
收藏
  |  
浏览/下载:39/3
  |  
提交时间:2011/07/05
4H-SiC
Raman scattering
LOPC modes
transport properties
SILICON-CARBIDE
LIGHT
GAP
Stretchable Graphene: A Close Look at Fundamental Parameters through Biaxial Straining
期刊论文
nano letters, 2010, 卷号: 10, 期号: 9, 页码: 3453-3458
Ding F (Ding Fei)
;
Ji HX (Ji Hengxing)
;
Chen YH (Chen Yonghai)
;
Herklotz A (Herklotz Andreas)
;
Dorr K (Doerr Kathrin)
;
Mei YF (Mei Yongfeng)
;
Rastelli A (Rastelli Armando)
;
Schmidt OG (Schmidt Oliver G.)
收藏
  |  
浏览/下载:243/38
  |  
提交时间:2010/09/20
Graphene
strain engineering
Gruneisen parameters
Raman spectroscopy
piezoelectric actuator
Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition
期刊论文
surface & coatings technology, 2009, 卷号: 203, 期号: 10-11, 页码: 1452-1456
作者:
Tan HR
;
Zhang XW
;
You JB
;
Fan YM
收藏
  |  
浏览/下载:264/33
  |  
提交时间:2010/03/08
Cubic boron nitride
Stress relaxation
Ion beam assisted deposition
Fourier transformed infrared spectroscopy
A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 8, 页码: 3063-3066
Fan, HB
;
Yang, SY
;
Zhang, PF
;
Wei, HY
;
Liu, XL
;
Jiao, CM
;
Zhu, QS
;
Chen, YH
;
Wang, ZG
收藏
  |  
浏览/下载:80/3
  |  
提交时间:2010/03/08
SINGLE-CRYSTAL
PHASE EPITAXY
SAPPHIRE
NANORODS
FILMS
Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy
期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1542-1544
Cui JP
;
Duan Y
;
Wang XF
;
Zeng YP
收藏
  |  
浏览/下载:222/122
  |  
提交时间:2010/03/08
ZnO film
Strain status
GaN buffer layer
Sapphire
MVPE
Identification of vacancies in electron irradiated GaSb by coincidence Doppler broadening spectroscopy
期刊论文
materials letters, 2007, 卷号: 61, 期号: 4-5, 页码: 1187-1189
Shao, YD (Shao, Y. D.)
;
Wang, Z (Wang, Z.)
;
Dai, YQ (Dai, Y. Q.)
;
Zhao, YW (Zhao, Y. W.)
;
Tang, FY (Tang, F. Y.)
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2010/03/29
GaSb
Porous ZnAl2O4 spinel nanorods doped with Eu3+: synthesis and photoluminescence
期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 12, 页码: 2982-2987
Cheng BC
;
Qu SC
;
Zhou HY
;
Wang ZG
收藏
  |  
浏览/下载:119/0
  |  
提交时间:2010/04/11
SPRAY-PYROLYSIS TECHNIQUE
SOL-GEL PROCESS
ZINC ALUMINATE
OPTICAL-PROPERTIES
CATHODOLUMINESCENT CHARACTERISTICS
HYDROTHERMAL SYNTHESIS
NANOCRYSTALLINE
COMBUSTION
SPECTRA
METHANE
Growth of ZnO single crystal by chemical vapor transport method
会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Zhou, JM
;
Dong, ZY
;
Wei, XC
;
Duan, ML
;
Li, JM
收藏
  |  
浏览/下载:564/45
  |  
提交时间:2010/03/29
zinc oxide
Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 6, 页码: 2153-2158
Zhang CG
;
Chen WD
;
Bian LF
;
Song SF
;
Hsu CC
收藏
  |  
浏览/下载:81/0
  |  
提交时间:2010/04/11
gallium nitride films
gallium oxide
carbonized-reaction
NITRIDE THIN-FILMS
TEMPERATURE
SUBSTRATE
SI(111)
The study of high temperature annealing of a-SiC : H films
会议论文
3rd international materials symposium/12th meeting of the sociedad-portuguesa-da-materials (materials 2005/spm), aveiro, portugal, mar 20-23, 2005
Zhang, S
;
Hu, Z
;
Raniero, L
;
Liao, X
;
Ferreira, I
;
Fortunato, E
;
Vilarinho, P
;
Perreira, L
;
Martins, R
收藏
  |  
浏览/下载:210/71
  |  
提交时间:2010/03/29
silicon carbide
high temperature annealing
thin film
SILICON
PECVD
©版权所有 ©2017 CSpace - Powered by
CSpace