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Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:  Li GK
收藏  |  浏览/下载：76/2  |  提交时间：2011/07/05
Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101
Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X
收藏  |  浏览/下载：20/0  |  提交时间：2012/01/06
Microstructure and electrical properties of Y(NO(3))(3)center dot 6H(2)O-doped ZnO-Bi(2)O(3)-based varistor ceramics 期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 38, 页码: 9312-9317
Xu D; Cheng XN; Yuan HM; Yang J; Lin YH
收藏  |  浏览/下载：21/0  |  提交时间：2011/09/14
Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well 期刊论文
nanoscale research letters, 2009, 卷号: 4, 期号: 11, 页码: 1315-1318
Wang J (Wang Jun); Li SS (Li Shu-Shen); Lu YW (Lue Yan-Wu); Liu XL (Liu Xiang-Lin); Yang SY (Yang Shao-Yan); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：279/95  |  提交时间：2010/03/08
Depolarization blueshift in intersubband transitions of triangular quantum wires 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712
作者:  Song HP;  Zhang B
收藏  |  浏览/下载：32/0  |  提交时间：2010/04/04
Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 6, 页码: 25-28
作者:  Liu Shiyong;  Peng Wenbo
收藏  |  浏览/下载：13/0  |  提交时间：2010/11/23
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：130/30  |  提交时间：2010/03/08
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1710-1713
Luo WJ; Wang XL; Guo LC; Mao HL; Wang CM; Ran JX; Li JP; Li JM
收藏  |  浏览/下载：191/53  |  提交时间：2010/03/08
GaN  Si(111)  Crack  AlN  MOCVD  
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Ji, G; Sun, GS; Ning, J; Liu, XF; Zhao, YM; Wang, L; Zhao, WS; Zeng, YP
收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09
Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling 期刊论文
spectroscopy and spectral analysis, 2007, 卷号: 27, 期号: 11, 页码: 2178-2181
Jia, GZ; Yao, JH; Zhang, CL; Shu, Q; Liu, RB; Ye, XL; Wang, ZG
收藏  |  浏览/下载：61/2  |  提交时间：2010/03/08

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