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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文 thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230 Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan) 收藏  |  浏览/下载：42/0  |  提交时间：2010/12/28 Gallium Arsenide  Gallium antimonide  Gallium antimonide/Aluminum antimonide  Superlattices  Molecular Beam Epitaxy  VAPOR-PHASE EPITAXY  SURFACE-MORPHOLOGY  GROWTH  SUPERLATTICES  TEMPERATURE  RELAXATION  DETECTORS  GAAS(001)  MOCVD  FILMS   High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：125/38  |  提交时间：2010/03/29 BUFFER LAYER  STRESS  PHOTODIODES  REDUCTION  DETECTORS  SAPPHIRE  EPITAXY  GROWTH   Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 283-287 Li Z (Li Z.); Li CJ (Li C. J.) 收藏  |  浏览/下载：50/0  |  提交时间：2010/04/11 DLTS  defects  detectors  sensors  current transient  SILICON DETECTORS   Nanofabrication of grid-patterned substrate by holographic lithography 期刊论文 journal of crystal growth, 2002, 卷号: 236, 期号: 1-3, 页码: 141-144 Huang CJ; Zhu XP; Li C; Zuo YH; Cheng BW; Li DZ; Luo LP; Yu JZ; Wang QM 收藏  |  浏览/下载：119/4  |  提交时间：2010/08/12 etching  nanostructures  substrates  ASSEMBLED GE ISLANDS  SI(001)  GROWTH  DOTS