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Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb 期刊论文
semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095010
Islam MR (Islam M. R.); Hasan MM (Hasan M. M.); Chen N (Chen N.); Fukuzawa M (Fukuzawa M.); Yamada M (Yamada M.)
收藏  |  浏览/下载:261/25  |  提交时间:2010/09/20
Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage 期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 3, 页码: 562-566
Liu P; He Y; Zhou JP; Mu CH; Zhang HW
收藏  |  浏览/下载:158/21  |  提交时间:2010/03/08
High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 9, 页码: 1091-1096
Zhang Yongxing; Sun Guosheng; Wang Lei; Zhao Wanshun; Gao Xin; Zeng Yiping; Li Jinmin; Li Siyuan
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/23
Capacitance-voltage spectroscopy of In0.5Ga0.5As self-assembled quantum dots in double quantum wells under selective photo-excitation 期刊论文
semiconductor science and technology, 2003, 卷号: 18, 期号: 8, 页码: 760-762
Li GR; Zheng HZ; Yang FH; Hu CY
收藏  |  浏览/下载:49/0  |  提交时间:2010/08/12
Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate 期刊论文
journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 96-103
Xu HZ; Bell A; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT
收藏  |  浏览/下载:54/0  |  提交时间:2010/08/12
Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy 期刊论文
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 107-112
Wang HL; Ning D; Zhu HJ; Chen F; Wang H; Wang XD; Feng SL
收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
GIANT CAPACITANCE OSCILLATIONS RELATED TO THE QUANTUM CAPACITANCE IN GAAS ALAS SUPERLATTICES 期刊论文
applied physics letters, 1994, 卷号: 64, 期号: 25, 页码: 3416-3418
ZHANG YH; LI YX; JIANG DH; YANG XP; ZHANG PH
收藏  |  浏览/下载:21/0  |  提交时间:2010/11/15


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