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Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:  Wang C
收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05
Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 10, 页码: art.no.103118
作者:  Xu B;  Ye XL;  Jin P
收藏  |  浏览/下载：75/0  |  提交时间：2010/03/29
MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198
Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：35/0  |  提交时间：2010/04/11
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 期刊论文
micron, 2004, 卷号: 35, 期号: 6, 页码: 475-480
Luo, XH; Wang, RM; Zhang, XP; Zhang, HZ; Yu, DP; Luo, MC
收藏  |  浏览/下载：147/32  |  提交时间：2010/03/09
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文
international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003
Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC
收藏  |  浏览/下载：18/1  |  提交时间：2010/10/29
Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文
science in china series e-technological sciences, 2003, 卷号: 46, 期号: 6, 页码: 620-626
作者:  Zhang SM
收藏  |  浏览/下载：254/65  |  提交时间：2010/08/12
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
作者:  Zhang SM
收藏  |  浏览/下载：230/30  |  提交时间：2010/08/12
Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 4, 页码: 518-522
作者:  Xu B
收藏  |  浏览/下载：105/8  |  提交时间：2010/08/12
Formation of InAs quantum dots on low-temperature GaAs epi-layer 期刊论文
journal of crystal growth, 2000, 卷号: 218, 期号: 2-4, 页码: 209-213
Wang XD; Niu ZC; Wang H; Feng SL
收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12
Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition 期刊论文
journal of electronic materials, 2000, 卷号: 29, 期号: 2, 页码: 177-182
作者:  Zhao DG
收藏  |  浏览/下载：44/0  |  提交时间：2010/08/12

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