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Nano-layer structure of silicon-on-insulator materials 会议论文
11th seoul international symposium on the physics of semiconductors and applications, seoul, south korea, aug 20-23, 2002
Wang X; Chen M; Chen J; Wang X; Dong YN; Liu XH; He P; Tian LL; Liu ZL
收藏  |  浏览/下载:20/0  |  提交时间:2010/11/15
Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate 期刊论文
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 255-260
作者:  Zhang SM;  Zhao DG
收藏  |  浏览/下载:89/5  |  提交时间:2010/08/12
Indium doping effect on GaN in the initial growth stage 期刊论文
journal of electronic materials, 2001, 卷号: 30, 期号: 8, 页码: 977-979
作者:  Han PD
收藏  |  浏览/下载:158/29  |  提交时间:2010/08/12
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 1062-1068
Niu ZC; Wang XD; Miao ZH; Feng SL
收藏  |  浏览/下载:80/6  |  提交时间:2010/08/12
High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers 会议论文
1999 ieee hong kong electron devices meeting (hkedm 99), shatin, hong kong, 36337
作者:  Xu B
收藏  |  浏览/下载:13/0  |  提交时间:2010/10/29


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