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科研机构
半导体研究所 [18]
内容类型
期刊论文 [15]
会议论文 [3]
发表日期
2011 [4]
2010 [2]
2009 [1]
2008 [1]
2007 [1]
2006 [2]
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半导体材料 [18]
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Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:
Duan RF
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  |  
浏览/下载:93/4
  |  
提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:
Song HP
;
Shi K
;
Sang L
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  |  
浏览/下载:58/3
  |  
提交时间:2011/07/05
Metal organic chemical vapor deposition
Sapphire
Zinc compounds
Semiconducting II-VI materials
VAPOR-PHASE EPITAXY
OPTICAL-PROPERTIES
ZNO NANORODS
RAMAN-SCATTERING
M-PLANE
FILMS
PHOTOLUMINESCENCE
DEPOSITION
NANOWIRES
FIELDS
Electrodepostied polyaniline films decorated with nano-islands: Characterization and application as anode buffer layers in solar cells
期刊论文
solar energy materials and solar cells, 2011, 卷号: 95, 期号: 2, 页码: 440-445
作者:
Liu K
;
Tan FR
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  |  
浏览/下载:101/5
  |  
提交时间:2011/07/05
Polyaniline
Electrodeposition
Thin films
Buffer layers
Solar cells
PHOTOVOLTAIC CELLS
POLYMER
NANOWIRES
EFFICIENCY
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:
Li GK
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  |  
浏览/下载:75/2
  |  
提交时间:2011/07/05
vanadium dioxide
infrared transition
diffraction effect
dual ion beam sputtering
annealing
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers
期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting)
;
Deng SK (Deng Shukang)
;
Shen LX (Shen Lanxian)
;
Yang PZ (Yang Peizhi)
;
Tu JL (Tu Jielei)
;
Liao H (Liao Hua)
;
Xu YQ (Xu Yingqiang)
;
Niu ZC (Niu Zhichuan)
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2010/12/28
Gallium Arsenide
Gallium antimonide
Gallium antimonide/Aluminum antimonide
Superlattices
Molecular Beam Epitaxy
VAPOR-PHASE EPITAXY
SURFACE-MORPHOLOGY
GROWTH
SUPERLATTICES
TEMPERATURE
RELAXATION
DETECTORS
GAAS(001)
MOCVD
FILMS
Preparation and Optical Performance of Freestanding GaN Thick Films
期刊论文
rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
作者:
Wei TB
;
Yang JK
;
Duan RF
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  |  
浏览/下载:58/10
  |  
提交时间:2011/07/05
GaN
HVPE
freestanding thick films
stress release
photoluminescence
VAPOR-PHASE EPITAXY
GROWTH
PRESSURE
HVPE
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
buffer layer
LPCVD
Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 12, 页码: 4364-4367
作者:
Wei HY
;
Jiao CM
收藏
  |  
浏览/下载:183/45
  |  
提交时间:2010/03/08
TRANSMISSION ELECTRON-MICROSCOPY
WURTZITE-TYPE CRYSTALS
VAPOR-PHASE EPITAXY
INTRINSIC STRESS
SAPPHIRE SURFACE
THIN-FILMS
GAN
GROWTH
DIFFRACTION
MECHANISM
Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD
期刊论文
modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Luo, MC
;
Li, JM
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2010/03/08
aluminum nitride
low pressure metalorganic chemical vapor deposition (LP-MOCVD)
V/III ratio
preferential orientation growth mechanism
The study of high temperature annealing of a-SiC : H films
会议论文
3rd international materials symposium/12th meeting of the sociedad-portuguesa-da-materials (materials 2005/spm), aveiro, portugal, mar 20-23, 2005
Zhang, S
;
Hu, Z
;
Raniero, L
;
Liao, X
;
Ferreira, I
;
Fortunato, E
;
Vilarinho, P
;
Perreira, L
;
Martins, R
收藏
  |  
浏览/下载:210/71
  |  
提交时间:2010/03/29
silicon carbide
high temperature annealing
thin film
SILICON
PECVD
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