QQ客服 官方微博 反馈留言

浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates 期刊论文 chinese physics, 2007, 卷号: 16, 期号: 5, 页码: 1467-1471 Liu Z (Liu Zhe); Wang XL (Wang Xiao-Liang); Wang JX (Wang Jun-Xi); Hu GX (Hu Guo-Xin); Guo LC (Guo Lun-Chun); Li JM (Li Jin-Min) 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29 GaN   Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文 optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231 Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua) 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 in doping  cracks  Si(111) substrate  LT-AlGaN interlayer  metalorganic chemical vapor deposition  GaN  PHASE EPITAXY  INDIUM-SURFACTANT  OPTICAL-PROPERTIES  SI(111)  STRESS  FILMS   Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition 期刊论文 journal of crystal growth, 2005, 卷号: 279, 期号: 3-4, 页码: 335-340 作者:  Li DB;  Wei HY;  Han XX 收藏  |  浏览/下载：59/22  |  提交时间：2010/03/17 cracks   Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer 期刊论文 journal of applied physics, 2004, 卷号: 96, 期号: 9, 页码: 4982-4988 Lu Y; Cong GW; Liu XL; Lu DC; Zhu QS; Wang XH; Wu JJ; Wang ZG 收藏  |  浏览/下载：78/29  |  提交时间：2010/03/09 CHEMICAL-VAPOR-DEPOSITION