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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Strain Distributions in Non-Polar a-Plane InxGa1-xN Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction 期刊论文 chinese physics letters, 2013, 卷号: 30, 期号: 9, 页码: 098102 Zhao, Gui-Juan; Yang, Shao-Yan; Liu, Gui-Peng; Liu, Chang-Bo; Sang, Ling; Gu, Cheng-Yan; Liu, Xiang-Lin; Wei, Hong-Yuan; Zhu, Qin-Sheng; Wang, Zhan-Guo 收藏  |  浏览/下载：17/0  |  提交时间：2014/03/26 Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX  GROWTH  LASERS  GAAS   Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots 期刊论文 chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1315-1319 Zhou WM; Wang CY; Chen YH; Wang ZG 收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11 quantum dots  strain and stress distribution  strain energy  finite element method  ISLANDS  GROWTH  GAAS  GAAS(001)  EVOLUTION