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科研机构
半导体研究所 [12]
内容类型
期刊论文 [11]
会议论文 [1]
发表日期
2011 [3]
2006 [4]
2003 [1]
2002 [1]
2000 [2]
1999 [1]
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半导体材料 [12]
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Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
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浏览/下载:70/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:
Duan RF
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  |  
浏览/下载:111/4
  |  
提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
Behavioural investigation of InN nanodots by surface topographies and phase images
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 44, 页码: 445306
Deng, QW
;
Wang, XL
;
Xiao, HL
;
Wang, CM
;
Yin, HB
;
Chen, H
;
Lin, DF
;
Li, JM
;
Wang, ZG
;
Hou, X
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/01/06
QUANTUM DOTS
SOLAR-CELLS
GROWTH
FILMS
GAN
Nanostructure in the p-layer and its impacts on amorphous silicon solar cells
期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1841-1846
Liao XB (Liao Xianbo)
;
Du WH (Du Wenhui)
;
Yang XS (Yang Xiesen)
;
Povolny H (Povolny Henry)
;
Xiang XB (Xiang Xianbi)
;
Deng XM (Deng Xunming)
;
Sun K (Sun Kai)
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  |  
浏览/下载:181/0
  |  
提交时间:2010/04/11
amorphous semiconductors
solar cells
microstructure
OPEN-CIRCUIT VOLTAGE
MICROCRYSTALLINE SILICON
DISCONTINUITIES
FILMS
Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells
期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1900-1903
Hu ZH (Hu Zhihua)
;
Liao XB (Liao Xianbo)
;
Diao HW (Diao Hongwei)
;
Cai Y (Cai Yi)
;
Zhang SB (Zhang Shibin)
;
Fortunato E (Fortunato Elvira)
;
Martins R (Martins Rodrigo)
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  |  
浏览/下载:62/0
  |  
提交时间:2010/04/11
silicon
solar cells
photovoltaics
Raman scattering
MICROCRYSTALLINE SILICON
SI NANOCRYSTALS
VOLUME FRACTION
RAMAN
CRYSTALLINITY
FILMS
Nanocrystalline silicon films with high conductivity and the application for PIN solar cells
期刊论文
vacuum, 2006, 卷号: 81, 期号: 1, 页码: 126-128
Min C (Cui Min)
;
Zhang WJ (Zhang Weija)
;
Wang TM (Wang Tianmin)
;
Jin F (Jin Fei)
;
Li GH (Li Guohua)
;
Ding K (Ding Kun)
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  |  
浏览/下载:29/0
  |  
提交时间:2010/04/11
nc-Si : H
conductivity
PECVD
films
solar cells
Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets
期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 498-508
Zuo R (Zuo Ran)
;
Zhang H (Zhang Hong)
;
Liu XL (Liu Xiang-lin)
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/04/11
flow recirculation
numerical modeling
reactor
transport process
MOCVD
thin film growth
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
MOVPE REACTOR
GROWTH
DESIGN
GAN
Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition
期刊论文
journal of vacuum science & technology a, 2003, 卷号: 21, 期号: 4, 页码: 838-841
Qu BZ
;
Zhu QS
;
Sun XH
;
Wan SK
;
Wang ZG
;
Nagai H
;
Kawaguchi Y
;
Hiramatsu K
;
Sawaki N
收藏
  |  
浏览/下载:293/4
  |  
提交时间:2010/08/12
P-TYPE GAN
LIGHT-EMITTING-DIODES
LOCALIZED EXCITONS
GALLIUM NITRIDE
FILMS
DEFECTS
LUMINESCENCE
COMPENSATION
SPECTROSCOPY
ACCEPTORS
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
会议论文
international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001
Sun GS
;
Luo MC
;
Wang L
;
Zhu SR
;
Li JM
;
Zeng YP
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
3C-SiC
in-situ doping
low-pressure CVD
sapphire substrate
CHEMICAL-VAPOR-DEPOSITION
COMPETITION EPITAXY
Pulsed excimer laser annealing of Mg-doped cubic GaN
期刊论文
journal of crystal growth, 2000, 卷号: 209, 期号: 1, 页码: 203-207
作者:
Zhao DG
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/08/12
annealing
cubic GaN
Mg doping
photoluminescence
MOLECULAR-BEAM EPITAXY
III-V NITRIDE
P-TYPE GAN
OPTICAL-PROPERTIES
COMPENSATION
DIODES
FILMS
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