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| Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801 作者: Xu B![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:54/3  |  提交时间:2011/07/05
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| Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311 作者: Xu B ; Zhou GY ; Ye XL ; Zhang HY![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:55/5  |  提交时间:2011/07/05
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| Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文 applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112 作者: Shi K ; Jiao CM ; Song HP![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:98/7  |  提交时间:2011/07/05
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| Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320 作者: Yang T![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:53/5  |  提交时间:2011/07/05
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| Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文 nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603 作者: Song HP![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:72/3  |  提交时间:2011/07/05
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| Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716 作者: Yin ZG ; Zhang XW ; Tan HR ; Fan YM ; Zhang SG![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:43/3  |  提交时间:2011/07/05
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| An investigation on InxGa1-xN/GaN multiple quantum well solar cells 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 26, 页码: art. no. 265103 作者: Yin HB ; Lin DF ; Hou QF ; Deng QW![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:40/2  |  提交时间:2011/07/07
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| Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:55/10  |  提交时间:2011/07/05
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| An investigation on In(x)Ga(1-x)N/GaN multiple quantum well solar cells 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 26, 页码: 265103 Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Hou QF; Lin DF; Li JM; Wang ZG; Hou X
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:13/0  |  提交时间:2012/01/06
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| Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202 作者: Jin P![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:46/4  |  提交时间:2011/07/15
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